Naresh Thapar

Thapar, N., & Baliga, B. J. (1999). Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor. SOLID-STATE ELECTRONICS, 43(2), 395–402. https://doi.org/10.1016/S0038-1101(98)00255-X

Thapar, N., & Baliga, B. J. (1998). An experimental evaluation of the on-state performance of trench IGBT designs. SOLID-STATE ELECTRONICS, 42(5), 771–776. https://doi.org/10.1016/S0038-1101(97)00301-8

Thapar, N., & Baliga, B. J. (1998). Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices. SOLID-STATE ELECTRONICS, 42(11), 1975–1979. https://doi.org/10.1016/S0038-1101(98)00179-8

Thapar, N., & Baliga, B. J. (1998). Influence of the collector resistance on the performance of accumulation channel driven bipolar transistor. SOLID-STATE ELECTRONICS, 42(9), 1697–1703. https://doi.org/10.1016/S0038-1101(98)00127-0

Thapar, N. I., Shenoy, P. M., & Baliga, B. J. (1998). Static-induction transistors having heterojunction gates and methods of forming same. Washington, DC: U.S. Patent and Trademark Office.

Baliga, B. J., & Thapar, N. I. (1997). Depleted base transistor with high forward voltage blocking capability. Washington, DC: U.S. Patent and Trademark Office.

Thapar, N., & Baliga, B. J. (1997). The accumulation channel driven bipolar transistor (ACBT). IEEE ELECTRON DEVICE LETTERS, 18(5), 178–180. https://doi.org/10.1109/55.568754