Kingsuk Maitra

Works (4)

Updated: July 5th, 2023 15:58

2007 journal article

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

JOURNAL OF APPLIED PHYSICS, 102(11).

By: K. Maitra n, M. Frank *, V. Narayanan *, V. Misra n  & E. Cartier *

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks

IEEE ELECTRON DEVICE LETTERS, 27(7), 591–594.

By: V. Narayanan *, K. Maitra n, B. Linder*, V. Paruchuri*, E. Gusev*, P. Jamison *, M. Frank *, A. Steen* ...

author keywords: chemical vapor deposition (CVD); electron mobility; hafnium oxide (HfO2); high-kappa dielectric; metal gate electrode; titanium nitride (TiN)
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Ferroelectric and Negative Capacitance Devices
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Impact of gate-to-source/drain overlap length on 80-nm CMOS circuit performance

IEEE TRANSACTIONS ON ELECTRON DEVICES, 51(3), 409–414.

By: K. Maitra n & N. Bhat*

author keywords: circuit; CMOS; gate; mixed mode; series resistance; source/drain overlap
topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Low-power high-performance VLSI design
TL;DR: It is demonstrated that the overlap length should be made as small as possible, in spite of the increase in series resistance, in order to get the best circuit performance and reliability. (via Semantic Scholar)
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 journal article

A simulation study to evaluate the feasibility of midgap workfunction metal gates in 25 nm bulk CMOS

IEEE ELECTRON DEVICE LETTERS, 24(11), 707–709.

By: K. Maitra n & V. Misra n 

author keywords: bandedge; bulk; CMOS; DIBL; metal gates; midgap; NMOSFETs; PMOSFETs; simulation; workfunction
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Ferroelectric and Negative Capacitance Devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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