Works (3)
Updated: July 5th, 2023 15:59
2005 journal article
Scanning electron microscopy cathodoluminescence studies of piezoelectric fields in an InGaN/GaN quantum-well light-emitting diode
APPLIED PHYSICS LETTERS, 86(8).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2004 journal article
High efficiency GaN-based LEDs and lasers on SiC
Journal of Crystal Growth, 272(04-Jan), 242–250.
Source: NC State University Libraries
Added: August 6, 2018
2003 article
Electrical characterization of InGaN quantum well p-n heterostructures
MICROELECTRONICS JOURNAL, Vol. 34, pp. 455–457.
author keywords: InGaN; electrical force microscopy; p-n heterostructure
TL;DR:
Cross-sectional Electrical Force Microscopy and High Resolution Electron Beam Induced Current (HR-EBIC) are used to study and identify regions of the cross-sectional surface of InGaN heterostructures with different types of electrical conductivity, the location of the In GaN quantum well, the locations of the p–n junction, and the depletion layer.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018
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