Works (4)

1999 journal article

Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy

Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

By: A. Pavlovska, V. Torres, J. Edwards, E. Bauer, D. Smith, R. Doak, I. Tsong, D. Thomson, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers

Applied Physics Letters, 74(7), 985–987.

By: V. Torres, J. Edwards, B. Wilkens, D. Smith, R. Doak & I. Tsong

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

Applied Physics Letters, 75(7), 989–991.

By: A. Pavlovska, V. Torres, E. Bauer, R. Doak, I. Tsong, D. Thomson, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of AlN and GaN on 6H SiC(0001) using a helium supersonic beam seeded with ammonia

Applied Physics Letters, 71(10), 1365–1367.

By: V. Torres, M. Stevens, J. Edwards, D. Smith, R. Doak & I. Tsong

Source: NC State University Libraries
Added: August 6, 2018