Works (4)

Updated: July 5th, 2023 16:04

1999 journal article

Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy

Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

By: A. Pavlovska, V. Torres, J. Edwards, E. Bauer, D. Smith, R. Doak, I. Tsong, D. Thomson, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers

APPLIED PHYSICS LETTERS, 74(7), 985–987.

By: V. Torres*, J. Edwards*, B. Wilkens*, D. Smith*, R. Doak* & I. Tsong*

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

APPLIED PHYSICS LETTERS, 75(7), 989–991.

By: A. Pavlovska*, V. Torres*, E. Bauer*, R. Doak*, I. Tsong*, D. Thomson n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Growth of AlN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia

APPLIED PHYSICS LETTERS, 71(10), 1365–1367.

By: V. Torres*, M. Stevens*, J. Edwards*, D. Smith*, R. Doak* & I. Tsong*

Source: Web Of Science
Added: August 6, 2018