Victor Mario Torres

Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy

Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers

APPLIED PHYSICS LETTERS, 74(7), 985–987.

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

APPLIED PHYSICS LETTERS, 75(7), 989–991.

Growth of AlN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia

APPLIED PHYSICS LETTERS, 71(10), 1365–1367.