Victor Mario Torres

Works (4)

Updated: July 5th, 2023 16:04

1999 journal article

Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy

Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

By: A. Pavlovska, V. Torres, J. Edwards, E. Bauer, D. Smith, R. Doak, I. Tsong, D. Thomson, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Influence of 6H–SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers

Torres, V. M., Edwards, J. L., Wilkens, B. J., Smith, D. J., Doak, R. B., & Tsong, I. S. T. (1999, February 15). Applied Physics Letters.

By: V. Torres n, J. Edwards*, B. Wilkens*, D. Smith *, R. Doak* & I. Tsong*

topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

1999 article

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

Pavlovska, A., Torres, V. M., Bauer, E., Doak, R. B., Tsong, I. S. T., Thomson, D. B., & Davis, R. F. (1999, August 16). Applied Physics Letters.

By: A. Pavlovska*, V. Torres*, E. Bauer *, R. Doak*, I. Tsong*, D. Thomson n, R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Photocathodes and Microchannel Plates
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Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of AlN and GaN on 6H–SiC(0001) using a helium supersonic beam seeded with ammonia

Torres, V. M., Stevens, M., Edwards, J. L., Smith, D. J., Doak, R. B., & Tsong, I. S. T. (1997, September 8). Applied Physics Letters.

By: V. Torres n, M. Stevens *, J. Edwards*, D. Smith *, R. Doak* & I. Tsong*

topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

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