1999 journal article
Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy
Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.
By: A. Pavlovska, V. Torres, J. Edwards, E. Bauer, D. Smith, R. Doak, I. Tsong, D. Thomson, R. Davis
Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers
APPLIED PHYSICS LETTERS, 74(7), 985–987.
By: V. Torres*, J. Edwards*, B. Wilkens*, D. Smith *, R. Doak* & I. Tsong*
Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source
APPLIED PHYSICS LETTERS, 75(7), 989–991.
By: A. Pavlovska*, V. Torres*, E. Bauer *, R. Doak*, I. Tsong*, D. Thomson n, R. Davis n
1997 journal article
Growth of AlN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia
APPLIED PHYSICS LETTERS, 71(10), 1365–1367.
By: V. Torres*, M. Stevens *, J. Edwards*, D. Smith *, R. Doak* & I. Tsong*
Open access is the free, immediate, online availability of research
articles. Making your research open access allows researchers across
to globe read and interact with your work which may increase citations
to your work.
For more information on open access and how you can increase your research impact, contact
the Copyright & Digital Scholarship Center (CDSC)