1999 journal article
Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy
Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.
By: A. Pavlovska, V. Torres, J. Edwards, E. Bauer, D. Smith, R. Doak, I. Tsong, D. Thomson, R. Davis
Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers
Applied Physics Letters, 74(7), 985–987.
By: V. Torres, J. Edwards, B. Wilkens, D. Smith, R. Doak & I. Tsong
Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source
Applied Physics Letters, 75(7), 989–991.
By: A. Pavlovska, V. Torres, E. Bauer, R. Doak, I. Tsong, D. Thomson, R. Davis
1997 journal article
Growth of AlN and GaN on 6H SiC(0001) using a helium supersonic beam seeded with ammonia
Applied Physics Letters, 71(10), 1365–1367.
By: V. Torres, M. Stevens, J. Edwards, D. Smith, R. Doak & I. Tsong
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