1999 journal article
Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy
Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.
1999 journal article
Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers
APPLIED PHYSICS LETTERS, 74(7), 985–987.
1999 journal article
Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source
APPLIED PHYSICS LETTERS, 75(7), 989–991.
1997 journal article
Growth of AlN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia
APPLIED PHYSICS LETTERS, 71(10), 1365–1367.
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