Victor Mario Torres

Pavlovska, A., Torres, V. M., Edwards, J. L., Bauer, E., Smith, D. J., Doak, R. B., … Davis, R. F. (1999). Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy. Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

Torres, V. M., Edwards, J. L., Wilkens, B. J., Smith, D. J., Doak, R. B., & Tsong, I. S. T. (1999). Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers. APPLIED PHYSICS LETTERS, 74(7), 985–987. https://doi.org/10.1063/1.123431

Pavlovska, A., Torres, V. M., Bauer, E., Doak, R. B., Tsong, I. S. T., Thomson, D. B., & Davis, R. F. (1999). Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source. APPLIED PHYSICS LETTERS, 75(7), 989–991. https://doi.org/10.1063/1.124575

Torres, V. M., Stevens, M., Edwards, J. L., Smith, D. J., Doak, R. B., & Tsong, I. S. T. (1997). Growth of AlN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia. APPLIED PHYSICS LETTERS, 71(10), 1365–1367. https://doi.org/10.1063/1.119895