Cristiano Krug

Composition, stability and oxygen transport in lanthanum and hafnium aluminates thin films on Si

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 249, 366–369.

Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition

Applied Physics Letters, 86(22).

Optical band gaps and composition dependence of hafnium-aluminate thin films grown by atomic layer chemical vapor deposition

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 23(6), 1706–1713.

Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition

Applied Physics Letters, 86(25).

Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379–2383.

Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1301–1308.

Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films

JOURNAL OF APPLIED PHYSICS, 96(5), 2674–2680.

Transport and exchange of hydrogen isotopes in silicon-device-related stacks

JOURNAL OF APPLIED PHYSICS, 95(3), 887–895.

Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

Applied Physics Letters, 84(26), 5413–5415.