Cristiano Krug

Works (9)

Updated: July 5th, 2023 15:58

2006 journal article

Composition, stability and oxygen transport in lanthanum and hafnium aluminates thin films on Si

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 249, 366–369.

By: L. Miotti, F. Tatsch, C. Driemeier, K. Bastos, V. Edon, M. Hugon, B. Agius, I. Baumvol, C. Krug

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379–2383.

By: C. Bae n, C. Krug n & G. Lucovsky n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2004 article

Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1301–1308.

By: C. Krug n & G. Lucovsky n

topics (OpenAlex): Semiconductor materials and devices; Copper Interconnects and Reliability; Semiconductor materials and interfaces
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films

JOURNAL OF APPLIED PHYSICS, 96(5), 2674–2680.

By: C. Bae n, C. Krug n, G. Lucovsky n, A. Chakraborty * & U. Mishra *

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
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Source: Web Of Science
Added: August 6, 2018

2004 journal article

Transport and exchange of hydrogen isotopes in silicon-device-related stacks

JOURNAL OF APPLIED PHYSICS, 95(3), 887–895.

By: C. Krug*, E. Gusev*, E. Cartier* & T. Zabel*

topics (OpenAlex): Semiconductor materials and devices; Silicon and Solar Cell Technologies; Advancements in Semiconductor Devices and Circuit Design
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

Applied Physics Letters, 84(26), 5413–5415.

By: C. Bae n, C. Krug n, G. Lucovsky n, A. Chakraborty * & U. Mishra *

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Source: NC State University Libraries
Added: August 6, 2018

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