@article{miotti_tatsch_driemeier_bastos_edon_hugon_agius_baumvol_krug_2006, title={Composition, stability and oxygen transport in lanthanum and hafnium aluminates thin films on Si}, volume={249}, journal={Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms}, author={Miotti, L. and Tatsch, F. and Driemeier, C. and Bastos, K. P. and Edon, V. and Hugon, M. C. and Agius, B. and Baumvol, I. J. R. and Krug, C.}, year={2006}, pages={366–369} }
 @article{driemeier_bastos_miotti_baumvol_nguyen_sayan_krug_2005, title={Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition}, volume={86}, number={22}, journal={Applied Physics Letters}, author={Driemeier, C. and Bastos, K. P. and Miotti, L. and Baumvol, I. J. R. and Nguyen, N. V. and Sayan, S. and Krug, C.}, year={2005} }
 @article{nguyen_sayan_levin_ehrstein_baumvol_driemeier_krug_wielunski_hung_diebold_2005, title={Optical band gaps and composition dependence of hafnium-aluminate thin films grown by atomic layer chemical vapor deposition}, volume={23}, number={6}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Nguyen, N. V. and Sayan, S. and Levin, I. and Ehrstein, J. R. and Baumvol, I. J. R. and Driemeier, C. and Krug, C. and Wielunski, L. and Hung, R. Y. and Diebold, A.}, year={2005}, pages={1706–1713} }
 @article{park_koo_kim_jeon_bae_krug_2005, title={Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition}, volume={86}, number={25}, journal={Applied Physics Letters}, author={Park, M. and Koo, J. and Kim, J. and Jeon, H. and Bae, C. and Krug, C.}, year={2005} }
 @article{bae_krug_lucovsky_2004, title={Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1806439}, abstractNote={Electron trapping in Al-gate n-GaN∕nitrided-thin-Ga2O3∕SiO2 and n-GaN∕Si3N4 MIS capacitors was evaluated by capacitance-voltage (C–V) measurements. Significant positive flatband voltage shift (ΔVfb) was observed with increasing starting dc bias in the C–V measurements. For similar equivalent oxide thickness and under the same C–V measurement conditions, ΔVfb in the nitride was 3–10 times larger than in the oxide samples. It is suggested that flatband voltage shifts are due to border traps in SiO2 and to interface and bulk traps in Si3N4 samples.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Bae, C and Krug, C and Lucovsky, G}, year={2004}, pages={2379–2383} }
 @article{krug_lucovsky_2004, title={Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation}, volume={22}, ISSN={["1520-8559"]}, DOI={10.1116/1.1755714}, abstractNote={Extensive spectroscopic characterization of high k materials under consideration for replacing Si oxide as the gate dielectric in Si-based microelectronic devices has been accomplished. Band offset energies of Zr silicates with respect to Si have been determined as a function of silicate alloy composition by combining near-edge x-ray absorption fine structure spectroscopy, vacuum-ultraviolet spectroscopic ellipsometry, x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, and ab initio calculations on cluster models. These studies provide insight that applies to both transition metal- and rare earth-based dielectrics, including binary oxides and silicate and aluminate alloys. Results have been used to estimate the electronic conduction through Hf silicate films as a function of alloy composition. Thermally induced chemical phase separation in Zr silicate films has been characterized using XPS, Fourier transform infrared spectroscopy, x-ray diffraction, high-resolution transmission electron microscopy, and extended x-ray absorption fine structure spectroscopy. Our results indicate separation into a noncrystalline, Si-rich phase and either nano- or microcrystalline ZrO2, depending on the original film stoichiometry.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Krug, C and Lucovsky, G}, year={2004}, pages={1301–1308} }
 @article{bae_krug_lucovsky_chakraborty_mishra_2004, title={Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films}, volume={96}, ISSN={["1089-7550"]}, DOI={10.1063/1.1772884}, abstractNote={The electrical characteristics of n-GaN∕nitrided-thin-Ga2O3∕SiO2 and n-GaN∕Si3N4 metal-insulator-semiconductor (MIS) capacitors have been compared, and the work-function difference ϕms and effective dielectric-fixed charge density Qf,eff have been determined. Oxide samples showed lower interface trap level density Dit, lower leakage current, and better reproducibility compared to the nitride samples. The superior properties of the oxide samples are partially attributed to the nitrided-thin-Ga2O3 layer (∼0.6-nm-thick). ϕms and Qf,eff were determined, respectively, as 0.13V and 1.0×1012qcm−2 in oxide and 0.27V and −3.6×1011qcm−2 in nitride samples using flatband voltage versus dielectric thickness data. True dielectric-fixed charge density and location of the major amount of fixed charge are discussed based on Qf,eff, Dit, and spontaneous polarization of n-GaN.}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bae, C and Krug, C and Lucovsky, G and Chakraborty, A and Mishra, U}, year={2004}, month={Sep}, pages={2674–2680} }
 @article{krug_gusev_cartier_zabel_2004, title={Transport and exchange of hydrogen isotopes in silicon-device-related stacks}, volume={95}, ISSN={["1089-7550"]}, DOI={10.1063/1.1633653}, abstractNote={Thermally driven transport and exchange of hydrogen and deuterium in silicon-based metal-oxide-semiconductor (MOS) device-related structures were experimentally investigated using elastic recoil detection analysis. The samples were planar stacks of different materials on crystalline silicon. The materials studied included silicon oxide prepared by thermal growth, polycrystalline silicon silicon nitride, silicon oxynitride, and borophosphosilicate glass (BPSG) prepared by chemical vapor deposition (CVD). CVD was performed using either standard (hydrogen-containing) or deuterated precursors. Thermal annealing was carried out at 350–800 °C for 10–300 min in argon or in forming gas, either standard (90 vol. % N2,10 vol. % H2) or deuterated. All materials except silicon nitride were permeable to hydrogen and deuterium in the temperature range studied. Isotope exchange in the polycrystalline Si/SiO2 structure was observed above 450 °C. BPSG showed very little relative isotope exchange. Implications to MOS device processing are discussed.}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Krug, C and Gusev, EP and Cartier, EA and Zabel, TH}, year={2004}, month={Feb}, pages={887–895} }
 @article{bae_krug_lucovsky_chakraborty_mishra_2004, title={Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures}, volume={84}, DOI={10.1063/1.1767599}, abstractNote={In most previous reports on Al-gated n-GaN∕SiO2 metal–oxide–semiconductor (MOS) structures, the work–function difference between Al and n-GaN (ϕms) has been chosen as 0V by assuming that the work function of the Al gate and n-GaN are both 4.1eV. In this letter, ϕms is determined as ∼0.1V using Al-gated n-GaN∕nitrided-thin-Ga2O3∕SiO2 MOS capacitors by measuring flatband voltage as a function of oxide thickness. Formation of an ultrathin (∼0.6-nm-thick) Ga2O3 layer on n-GaN prior to the deposition of SiO2 is important to prevent uncontrolled parasitic oxidation of then-GaN surface and possibly reduces the interface dipole between n-GaN and SiO2.}, number={26}, journal={Applied Physics Letters}, author={Bae, C. and Krug, C. and Lucovsky, G. and Chakraborty, A. and Mishra, U.}, year={2004}, pages={5413–5415} }