Cristiano Krug

Miotti, L., Tatsch, F., Driemeier, C., Bastos, K. P., Edon, V., Hugon, M. C., … Krug, C. (2006). Composition, stability and oxygen transport in lanthanum and hafnium aluminates thin films on Si. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 249, 366–369.

Driemeier, C., Bastos, K. P., Miotti, L., Baumvol, I. J. R., Nguyen, N. V., Sayan, S., & Krug, C. (2005). Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition. Applied Physics Letters, 86(22).

Nguyen, N. V., Sayan, S., Levin, I., Ehrstein, J. R., Baumvol, I. J. R., Driemeier, C., … Diebold, A. (2005). Optical band gaps and composition dependence of hafnium-aluminate thin films grown by atomic layer chemical vapor deposition. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 23(6), 1706–1713.

Park, M., Koo, J., Kim, J., Jeon, H., Bae, C., & Krug, C. (2005). Suppression of parasitic Si substrate oxidation in HfO2-ultrathin-Al2O3-Si structures prepared by atomic layer deposition. Applied Physics Letters, 86(25).

Bae, C., Krug, C., & Lucovsky, G. (2004). Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2379–2383. https://doi.org/10.1116/1.1806439

Krug, C., & Lucovsky, G. (2004). Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1301–1308. https://doi.org/10.1116/1.1755714

Bae, C., Krug, C., Lucovsky, G., Chakraborty, A., & Mishra, U. (2004). Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films. JOURNAL OF APPLIED PHYSICS, 96(5), 2674–2680. https://doi.org/10.1063/1.1772884

Krug, C., Gusev, E. P., Cartier, E. A., & Zabel, T. H. (2004). Transport and exchange of hydrogen isotopes in silicon-device-related stacks. JOURNAL OF APPLIED PHYSICS, 95(3), 887–895. https://doi.org/10.1063/1.1633653

Bae, C., Krug, C., Lucovsky, G., Chakraborty, A., & Mishra, U. (2004). Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures. Applied Physics Letters, 84(26), 5413–5415. https://doi.org/10.1063/1.1767599