Eric Porter Carlson

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2008). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. Washington, DC: U.S. Patent and Trademark Office.

Cuomo, J. J., Williams, N. M., Hanser, A. D., Carlson, E. P., & Thomas, D. T. (2004). MIIIN based materials and methods and apparatus for producing same. Washington, DC: U.S. Patent and Trademark Office.

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. Washington, DC: U.S. Patent and Trademark Office.

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Park, M., Maria, J. P., Cuomo, J. J., Chang, Y. C., Muth, J. F., Kolbas, R. M., … Bumgarner, J. (2002). X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy. APPLIED PHYSICS LETTERS, 81(10), 1797–1799. https://doi.org/10.1063/1.1506781

Ronning, C., Carlson, E. P., & Davis, R. F. (2001). [Review of Ion implantation into gallium nitride]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 351(5), 349–385. https://doi.org/10.1016/S0370-1573(00)00142-3

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2001). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. Washington, DC: U.S. Patent and Trademark Office.

Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., & Davis, R. F. (2000). Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition. Materials Science Forum, 338(3), 1491–1494.

Ronning, C., Hofsass, H., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., … Davis, R. F. (2000). Photoluminescence characterization of Mg implanted GaN. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., & Davis, R. F. (1999). Characterization of Be-implanted GaN annealed at high temperatures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., Smith, T., … Davis, R. (1999). Pendeo-epitaxy of gallium nitride thin films. Applied Physics Letters, 75(2), 196–198. https://doi.org/10.1063/1.124317

Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., … Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., … Davis, R. F. (1999). Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., & Davis, R. F. (1999). X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms. JOURNAL OF APPLIED PHYSICS, 86(10), 5584–5593. https://doi.org/10.1063/1.371564

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245. https://doi.org/10.1007/s11664-998-0394-7

Ronning, C., Carlson, E. P., Thomson, D. B., & Davis, R. F. (1998). Optical activation of Be implanted into GaN. APPLIED PHYSICS LETTERS, 73(12), 1622–1624. https://doi.org/10.1063/1.122225

Parikh, N., Suvkhanov, A., Lioubtchenko, M., Carlson, E., Bremser, M., Bray, D., … Hunn, J. (1997, May). Ion implantation of epitaxial GaN films: Damage, doping and activation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 463–466. https://doi.org/10.1016/S0168-583X(97)00076-1

Cuomo, J. J., Williams, N. M., Hanser, A. D., Carlson, E. P., & Thomas, D. T. Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon. Washington, DC: U.S. Patent and Trademark Office.