Seann M. Bishop

Bishop, S. M., Reynolds, C. L., Molstad, J. C., Stevie, F. A., Barnhardt, D. E., & Davis, R. F. (2009). On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0). APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539. https://doi.org/10.1016/j.apsusc.2009.02.036

Bishop, S. M., Reynolds, C. L., Jr., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., … Davis, R. F. (2008). Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0). JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78. https://doi.org/10.1016/j.jcrysgro.2008.09.200

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89. https://doi.org/10.1016/j.jcrysgro.2006.10.207

Bishop, S. M., Reynolds, C. L., Jr., Liliental-Weber, Z., Uprety, Y., Zhu, J., Wang, D., … Davis, R. F. (2007, April). Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [11(2)over bar0]- and [0001]-oriented silicon carbide substrates. JOURNAL OF ELECTRONIC MATERIALS, Vol. 36, pp. 285–296. https://doi.org/10.1007/s11664-006-0076-2

Park, J. S., Fothergill, D. W., Wellenius, P., Bishop, S. M., Muth, J. F., & Davis, R. F. (2006). Origins of parasitic emissions from 353 nm AlGaN-based ultraviolet light emitting diodes over SiC substrates. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(5A), 4083–4086. https://doi.org/10.1143/jjap.45.4083

Bishop, S. M., Preble, E. A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., … Davis, R. F. (2004). Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization. In J. C. R. Madar & E. Blanquet (Eds.), Silicon carbide and related materials 2003: ICSCRM2003: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003 (Vol. 457-460, pp. 221–224). Utikon-Zurich, Switzerland: Trans Tech Publications.