Meredith L. Reed

Reed, M. J., Arkun, F. E., Berkman, E. A., Elmasry, N. A., Zavada, J., Luen, M. O., … Bedair, S. M. (2005). Effect of doping on the magnetic properties of GaMnN: Fermi level engineering. APPLIED PHYSICS LETTERS, 86(10). https://doi.org/10.1063/1.1881786

Arkun, F. E., Reed, M. J., Berkman, E. A., El-Masry, N. A., Zavada, J. M., Reed, M. L., & Bedair, S. M. (2004). Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface. APPLIED PHYSICS LETTERS, 85(17), 3809–3811. https://doi.org/10.1063/1.1810216

Reed, M. L., Reed, M. J., Jagannadham, K., Verghese, K., Bedair, S. M., El-Masry, N., & Butler, J. E. (2004). Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1191–1194. https://doi.org/10.1116/1.1763910

ElMasry, N. A., Bedair, S. M., Reed, M. L., & Stadelmaier, H. Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same. Washington, DC: U.S. Patent and Trademark Office.