Rashmi Jha

Lichtenwalner, D. J., Jur, J. S., Jha, R., Inoue, N., Chen, B., Misra, V., & Kingon, A. I. (2006). High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214. https://doi.org/10.1149/1.2218757

Chen, B., Jha, R., Lazar, H., Biswas, N., Lee, J., Lee, B., … Misra, V. (2006). Influence of oxygen diffusion through capping layers of low work function metal gate electrodes. IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230. https://doi.org/10.1109/LED.2006.871184

Chen, B., Jha, R., & Misra, V. (2006). Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys. IEEE ELECTRON DEVICE LETTERS, 27(9), 731–733. https://doi.org/10.1109/LED.2006.880643

Jha, R., Lee, J., Majhi, P., & Misra, V. (2005). Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications. APPLIED PHYSICS LETTERS, 87(22). https://doi.org/10.1063/1.2136425

Kim, Y. H., Choi, R., Jha, R., Lee, J. H., Misra, V., & Lee, J. C. (2004). Reliability of high-k dielectrics and its dependence on gate electrode and interfacial high-k bi-layer structure. MICROELECTRONICS RELIABILITY, Vol. 44, pp. 1513–1518. https://doi.org/10.1016/j.microrel.2004.07.049