Colin A. Wolden

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245.

Coalesced oriented diamond films on nickel

JOURNAL OF MATERIALS RESEARCH, 13(5), 1120–1123.

Flat-flame diamond CVD: the effect of pressure and operating conditions for specific applications

Wolden, C. A., Davis, R. F., Sitar, Z., & Prater, J. T. (1998, February). DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 133–138.

Heteroepitaxial nucleation of diamond on nickel

Sitar, Z., Liu, W., Yang, P. C., Wolden, C. A., Schlesser, R., & Prater, J. T. (1998, February). DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 276–282.

Surface melting in the heteroepitaxial nucleation of diamond on Ni

JOURNAL OF CRYSTAL GROWTH, 187(1), 81–88.

Transmission electron microscopy analysis of the oriented diamond growth on nickel substrates

JOURNAL OF APPLIED PHYSICS, 83(12), 7658–7663.

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

APPLIED PHYSICS LETTERS, 71(25), 3631–3633.

Highly oriented diamond deposited using a low pressure flat flame

MATERIALS LETTERS, 32(1), 9–12.

In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame

JOURNAL OF MATERIALS RESEARCH, 12(10), 2733–2742.

Low-temperature deposition of optically transparent diamond using a low-pressure flat flame

DIAMOND AND RELATED MATERIALS, 6(12), 1862–1867.