@article{park_parsons_2012, title={Atomic layer deposition of Ru onto organic monolayers: Shifting metal effective work function using monolayer structure}, volume={30}, ISSN={["1520-8559"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000298992800062&KeyUID=WOS:000298992800062}, DOI={10.1116/1.3671938}, abstractNote={Organic thin films are integrated with metal atomic layer deposition metallization to adjust and tune the electronic properties of metal/dielectric junctions. Specifically, 3-aminopropyltriethoxysilane (APTES) and undecenyltrichlorosilane (UDTS) self-assembled monolayers on hafnia-based dielectrics produce a shift in the effective work function of ruthenium metal deposited by atomic layer deposition at 325 °C onto the monolayer/oxide heterostructure. Based on infrared analysis, the molecular monolayer is relatively stable upon heating above 300 °C. The effective work function extracted from measurements of flat band voltage versus oxide thickness shift by +0.1 and −0.6 V when the metal is deposited on APTES and UDTS, respectively, consistent with expected organic interface dipoles on the dielectric surface. Results suggest various nucleation mechanisms for ALD growth on organic monolayers, and demonstrate that low temperature ALD is useful for metallization of organic modified surfaces for a range of applications.}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Park, Kie Jin and Parsons, Gregory N.}, year={2012}, month={Jan} }
 @article{peng_spagnola_daisuke_park_parsons_2008, title={Conformal metal oxide coatings on nanotubes by direct low temperature metal-organic pyrolysis in supercritical carbon dioxide}, volume={26}, ISSN={["2166-2746"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000256304600016&KeyUID=WOS:000256304600016}, DOI={10.1116/1.2917072}, abstractNote={The authors demonstrate that low temperature (<200 °C) thermal decomposition of metal-organic precursors dissolved in supercritical carbon dioxide (scCO2) is an effective method to penetrate into dense three-dimensional networks and deposit conformal metal oxide films with tunable thickness. The results specifically show that thermal decomposition of gallium acetylacetonate in scCO2, leads to conformal coatings of gallium oxide on multiwalled carbon nanotube forests with a fast deposition rate (∼3–4 nm/min), without the need for any cosolvent. Moreover, as-formed metal oxide/nanotube structures can be further conformally coated by metal atomic layer deposition to produce nanotube/oxide/metal nanocomposites.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Peng, Qing and Spagnola, Joseph C. and Daisuke, Hojo and Park, Kie Jin and Parsons, Gregory N.}, year={2008}, month={May}, pages={978–982} }
 @article{peng_hojo_park_parsons_2008, title={Low temperature metal oxide film deposition and reaction kinetics in supercritical carbon dioxide}, volume={516}, ISSN={["0040-6090"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000256509100054&KeyUID=WOS:000256509100054}, DOI={10.1016/j.tsf.2007.10.057}, abstractNote={An effective method is developed for low temperature metal oxide deposition through thermal decomposition of metal diketonates in supercritical carbon dioxide (scCO2) solvent. The rates of Al(acac)3 (Aluminum acetyl acetonate) and Ga(acac)3 (Gallium acetyl acetonate) thermal decomposition in scCO2 to form conformal Al2O3 and Ga2O3 thin films on planar surfaces were investigated. The thermal decomposition reaction of Al(acac)3 and Ga(acac)3 was found to be initialized at ∼ 150 °C and 160 °C respectively in scCO2 solvent, compared to ∼ 250 °C and 360 °C in analogous vacuum-based processes. By measuring the temperature dependence of the growth rates of metal oxide thin films, the apparent activation energy for the thermal decomposition of Al(acac)3 in scCO2 is found to be 68 ± 6 kJ/mol, in comparison with 80–100 kJ/mol observed for the corresponding vacuum-based thermal decomposition reaction. The enhanced thermal decomposition rate in scCO2 is ascribed to the high density solvent which effectively reduces the energy of the polar transition states in the reaction pathway. Preliminary results of thin film deposition of other metal oxides including ZrOx, FeOx, Co2O3, Cr2O3, HfOx from thermal decomposition of metal diketonates or fluorinated diketonates in scCO2 are also presented.}, number={15}, journal={THIN SOLID FILMS}, author={Peng, Qing and Hojo, Daisuke and Park, Kie Jin and Parsons, Gregory N.}, year={2008}, month={Jun}, pages={4997–5003} }
 @article{hyde_park_stewart_hinestroza_parsons_2007, title={Atomic layer deposition of Conformal inorganic nanoscale coatings on three-dimensional natural fiber systems: Effect of surface topology on film growth characteristics}, volume={23}, ISSN={["0743-7463"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000249241300048&KeyUID=WOS:000249241300048}, DOI={10.1021/la701449t}, abstractNote={Atomic-scale material deposition is utilized to achieve uniform coverage and modification of the surface properties of natural fiber and woven fabric materials, where irregular nanoscale features are embedded in a macroscale interpenetrating fiber network. The complex surface topology of the woven fabric results in significantly different film-growth thickness per ALD cycle as compared to planar surfaces coated using the same process conditions, likely due to reactant adsorption within the fiber starting material, as well as impeded reactant transport out of the fabric system during the purge cycle. Cotton textiles modified with conformal nanoscale Al2O3 are found to show extreme hydrophobic effects, distinctly different from planar surfaces that receive the same coatings. The results highlight key concerns for achieving controlled conformal coatings on complex surfaces and open the possibility for new textile finishing approaches to create novel fabric-based materials with specialized function and performance.}, number={19}, journal={LANGMUIR}, author={Hyde, G. Kevin and Park, Kie Jin and Stewart, S. Michael and Hinestroza, Juan P. and Parsons, Gregory N.}, year={2007}, month={Sep}, pages={9844–9849} }
 @article{park_terry_stewart_parsons_2007, title={In situ Auger electron spectroscopy study of atomic layer deposition: Growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces}, volume={23}, ISSN={["0743-7463"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000246456700038&KeyUID=WOS:000246456700038}, DOI={10.1021/la061898u}, abstractNote={Growth initiation and film nucleation in atomic layer deposition (ALD) is important for controlling interface composition and achieving atomic-scale films with well-defined composition. Ruthenium ALD is studied here using ruthenocene and oxygen as reactants, and growth initiation and nucleation are characterized on several different growth surfaces, including SiO2, HfO2, and hydrogen terminated silicon, using on-line Auger electron spectroscopy and ex-situ X-ray photoelectron spectroscopy. The time needed to reach the full growth rate (typically approximately 1 A per deposition cycle) is found to increase as the surface energy of the starting surface (determined from contact angle measurements) decreased. Growth starts more readily on HfO2 than on SiO2 or Si-H surfaces, and Auger analysis indicates distinct differences in surface reactions on the various surfaces during film nucleation. Specifically, surface oxygen is consumed during ruthenocene exposure, so the nucleation rate will depend on the availability of oxygen and the energetics of surface oxygen bonding on the starting substrate surface.}, number={11}, journal={LANGMUIR}, author={Park, Kie Jin and Terry, David B. and Stewart, S. Michael and Parsons, Gregory N.}, year={2007}, month={May}, pages={6106–6112} }
 @article{park_parsons_2006, title={Selective area atomic layer deposition of rhodium and effective work function characterization in capacitor structures}, volume={89}, ISSN={["0003-6951"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000239376500102&KeyUID=WOS:000239376500102}, DOI={10.1063/1.2234846}, abstractNote={Atomic layer deposition (ALD) of rhodium was investigated using rhodium(III) acetylacetonate and oxygen, and capacitance versus voltage is used to extract the effective work function in metal/insulator/semiconductor structures. Self-limiting growth was observed, and the resistivity of Rh deposited at 300°C is ∼10μΩcm, approximately a factor of 2 larger than the Rh bulk resistivity (4.3μΩcm). Selective area deposition is achieved using patterned resist layers, enabling capacitor fabrication without Rh etching. In the as-deposited state, the effective work function was measured to be 5.43 and 5.25eV on SiO2 and HfO2 dielectrics, respectively. The ALD Rh films formed under conditions used likely contain residual oxygen which can affect oxygen vacancy creation and the effective work function at the metal/dielectric interface.}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Park, K. J. and Parsons, G. N.}, year={2006}, month={Jul} }
 @article{park_doub_gougousi_parsons_2005, title={Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition}, volume={86}, ISSN={["0003-6951"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000227144700016&KeyUID=WOS:000227144700016}, DOI={10.1063/1.1852079}, abstractNote={Patterned octadecyltrichlorosilane monolayers are used to inhibit film nucleation, enabling selective area atomic layer deposition (ALD) of ruthenium on SiO2 and HfO2 surfaces using bis-(cyclopentadienyl)ruthenium and oxygen. X-ray photoelectron spectroscopy indicated that OTS could deactivate film growth on thermal silicon oxide and hafnium oxide surfaces. The growth rate of ALD Ru is similar on various starting surfaces, but the growth initiation differed substantially. Metal-oxide-semiconductor capacitors were fabricated directly using the selective-area process. Capacitance measurements indicate the effective work function of ALD Ru is 4.84±0.1eV on SiO2, and the effective work function is reduced on HfO2∕SiO2 layers.}, number={5}, journal={APPLIED PHYSICS LETTERS}, author={Park, KJ and Doub, JM and Gougousi, T and Parsons, GN}, year={2005}, month={Jan} }
 @article{park_parsons_2004, title={Bulk and interface charge in low temperature silicon nitride for thin film transistors on plastic substrates}, volume={22}, ISSN={["0734-2101"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000225505900007&KeyUID=WOS:000225505900007}, DOI={10.1116/1.1795822}, abstractNote={We report bulk and interface charge densities in silicon nitride thin films deposited by plasma chemical vapor deposition from NH3–N2–SiH4 mixtures, at temperatures compatible with flexible plastic substrates. Bulk and interface charges are independently determined from measurements of flat band potential as a function of film thickness for a range of substrate temperatures and gas compositions. Increasing NH–SiH bond ratio in the deposited films (determined from infrared absorption) leads to a more positive interface charge and more negative bulk charge, and the trend in interface charge is consistent with a relation between charge and stress at the Si–SiNx interface. As substrate temperature is decreased from 250to50°C, the leakage is observed to decrease, the interface charge decreases, and the bulk charge changes from negative to net positive.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Park, KJ and Parsons, GN}, year={2004}, pages={2256–2260} }