Kie Jin Park

Park, K. J., & Parsons, G. N. (2012). Atomic layer deposition of Ru onto organic monolayers: Shifting metal effective work function using monolayer structure. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 30(1). https://doi.org/10.1116/1.3671938

Peng, Q., Spagnola, J. C., Daisuke, H., Park, K. J., & Parsons, G. N. (2008). Conformal metal oxide coatings on nanotubes by direct low temperature metal-organic pyrolysis in supercritical carbon dioxide. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26(3), 978–982. https://doi.org/10.1116/1.2917072

Peng, Q., Hojo, D., Park, K. J., & Parsons, G. N. (2008). Low temperature metal oxide film deposition and reaction kinetics in supercritical carbon dioxide. THIN SOLID FILMS, 516(15), 4997–5003. https://doi.org/10.1016/j.tsf.2007.10.057

Hyde, G. K., Park, K. J., Stewart, S. M., Hinestroza, J. P., & Parsons, G. N. (2007). Atomic layer deposition of Conformal inorganic nanoscale coatings on three-dimensional natural fiber systems: Effect of surface topology on film growth characteristics. LANGMUIR, 23(19), 9844–9849. https://doi.org/10.1021/la701449t

Park, K. J., Terry, D. B., Stewart, S. M., & Parsons, G. N. (2007). In situ Auger electron spectroscopy study of atomic layer deposition: Growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces. LANGMUIR, 23(11), 6106–6112. https://doi.org/10.1021/la061898u

Park, K. J., & Parsons, G. N. (2006). Selective area atomic layer deposition of rhodium and effective work function characterization in capacitor structures. APPLIED PHYSICS LETTERS, 89(4). https://doi.org/10.1063/1.2234846

Park, K. J., Doub, J. M., Gougousi, T., & Parsons, G. N. (2005). Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition. APPLIED PHYSICS LETTERS, 86(5). https://doi.org/10.1063/1.1852079

Park, K. J., & Parsons, G. N. (2004). Bulk and interface charge in low temperature silicon nitride for thin film transistors on plastic substrates. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 22(6), 2256–2260. https://doi.org/10.1116/1.1795822