Brian P. Wagner

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89. https://doi.org/10.1016/j.jcrysgro.2006.10.207

Wagner, B. P., Reitmeier, Z. J., Park, J. S., Bachelor, D., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. (2006). Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates. JOURNAL OF CRYSTAL GROWTH, 290(2), 504–512. https://doi.org/10.1016/j.jcrysgro.2006.02.011

Bai, J., Huang, X., Dudley, M., Wagner, B., Davis, R. F., Wu, L., … Skromme, B. J. (2005). Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN. Journal of Applied Physics, 98(6).

Mecouch, W. J., Wagner, B. P., Reitmeier, Z. J., Davis, R. F., Pandarinath, C., Rodriguez, B. J., & Nemanich, R. J. (2005). Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23(1), 72–77. https://doi.org/10.1116/1.1830497

Huang, X. R., Bai, J., Dudley, M., Wagner, B., Davis, R. F., & Zhu, Y. (2005). Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides. Physical Review Letters, 95(8).

Zakharov, D. N., Liliental-Weber, Z., Wagner, B., Reitmeier, Z. J., Preble, E. A., & Davis, R. F. (2005). Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 71(23).

Bai, J., Dudley, M., Chen, L., Skromme, B. J., Wagner, B., Davis, R. F., … Dupuis, R. D. (2005). Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates. Journal of Applied Physics, 97(11).