Works (8)

Updated: July 5th, 2023 15:57

2006 article

Development and experimental demonstration of a self-powered ETO (SPETO)

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 42, pp. 1387โ€“1394.

By: B. Zhang, A. Huang n, B. Chenโ€‰ n, S. Atcitty* & M. Ingram*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: base/gate drive suppression; emitter turn-off thyristor (ETO); gate turn-off thyristor (GTO); self-powered ETO (SPETO)
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Electrical and physical analysis of MoTa alloy for gate electrode applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(5), G417โ€“G419.

By: B. Chen n, N. Biswas n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210โ€“F214.

By: D. Lichtenwalner*, J. Jur*, R. Jha n, N. Inoue*, B. Chen n, V. Misra nโ€‰, A. Kingon*

co-author countries: Australia ๐Ÿ‡ฆ๐Ÿ‡บ United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 27(4), 228โ€“230.

By: B. Chen n, R. Jha n, H. Lazar n, N. Biswas n, J. Lee n, B. Lee n, L. Wielunski*, E. Garfunkel*, V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys

IEEE ELECTRON DEVICE LETTERS, 27(9), 731โ€“733.

By: B. Chen n, R. Jha n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: AlTa; AlTaN; dipole; effective work function; metal gate
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

APPLIED PHYSICS LETTERS, 87(7).

By: Y. Lin n, M. Ozturk n, B. Chen n, S. Rhee*, J. Leeโ€‰* & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Physical and electrical analysis of RuxYy alloys for gate electrode applications

APPLIED PHYSICS LETTERS, 86(5).

By: B. Chen n, Y. Suh n, J. Lee n, J. Gurganus n, V. Misra nโ€‰ & C. Cabral*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Properties of Ta-Mo alloy gate electrode for n-MOSFET

JOURNAL OF MATERIALS SCIENCE, 40(9-10), 2693โ€“2695.

By: C. Lee*, J. Kim*, S. Hong*, H. Zhong*, B. Chen n & V. Misra nโ€‰

co-author countries: Korea (Republic of) ๐Ÿ‡ฐ๐Ÿ‡ท United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018