Bei Chen

2006 article

Development and experimental demonstration of a self-powered ETO (SPETO)

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 42, pp. 1387–1394.

By: B. Zhang, A. Huangⁿ, B. Chen ⁿ, S. Atcitty^* & M. Ingram^*

co-author countries: United States of America 🇺🇸

author keywords: base/gate drive suppression; emitter turn-off thyristor (ETO); gate turn-off thyristor (GTO); self-powered ETO (SPETO)

10.1109/TIA.2006.882657

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Source: Web Of Science

Added: August 6, 2018

2006 journal article

Electrical and physical analysis of MoTa alloy for gate electrode applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(5), G417–G419.

By: B. Chenⁿ, N. Biswasⁿ & V. Misraⁿ

co-author countries: United States of America 🇺🇸

10.1149/1.2180710

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Sources: Web Of Science, ORCID

Added: August 6, 2018

2006 journal article

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214.

By: D. Lichtenwalner^*, J. Jur^*, R. Jhaⁿ, N. Inoue^*, B. Chenⁿ, V. Misraⁿ , A. Kingon^*

co-author countries: Australia 🇦🇺 United States of America 🇺🇸

10.1149/1.2218757

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Sources: Web Of Science, ORCID

Added: August 6, 2018

2006 journal article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230.

By: B. Chenⁿ, R. Jhaⁿ, H. Lazarⁿ, N. Biswasⁿ, J. Leeⁿ, B. Leeⁿ, L. Wielunski^*, E. Garfunkel^*, V. Misraⁿ

co-author countries: United States of America 🇺🇸

author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion

10.1109/LED.2006.871184

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Sources: Web Of Science, ORCID

Added: August 6, 2018

2006 journal article

Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys

IEEE ELECTRON DEVICE LETTERS, 27(9), 731–733.

By: B. Chenⁿ, R. Jhaⁿ & V. Misraⁿ

co-author countries: United States of America 🇺🇸

author keywords: AlTa; AlTaN; dipole; effective work function; metal gate

10.1109/LED.2006.880643

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Sources: Web Of Science, ORCID

Added: August 6, 2018

2005 journal article

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

APPLIED PHYSICS LETTERS, 87(7).

By: Y. Linⁿ, M. Ozturkⁿ, B. Chenⁿ, S. Rhee^*, J. Lee ^* & V. Misraⁿ

co-author countries: United States of America 🇺🇸

10.1063/1.2009809

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Sources: Web Of Science, ORCID

Added: August 6, 2018

2005 journal article

Physical and electrical analysis of RuxYy alloys for gate electrode applications

APPLIED PHYSICS LETTERS, 86(5).

By: B. Chenⁿ, Y. Suhⁿ, J. Leeⁿ, J. Gurganusⁿ, V. Misraⁿ & C. Cabral^*

co-author countries: United States of America 🇺🇸

10.1063/1.1857093

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Sources: Web Of Science, ORCID

Added: August 6, 2018

2005 journal article

Properties of Ta-Mo alloy gate electrode for n-MOSFET

JOURNAL OF MATERIALS SCIENCE, 40(9-10), 2693–2695.

By: C. Lee^*, J. Kim^*, S. Hong^*, H. Zhong^*, B. Chenⁿ & V. Misraⁿ

co-author countries: Korea (Republic of) 🇰🇷 United States of America 🇺🇸

10.1007/s10853-005-2108-3

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Sources: Web Of Science, ORCID

Added: August 6, 2018

Works (8)