Bei Chen

Works (8)

Updated: July 5th, 2023 15:57

2006 article

Development and Experimental Demonstration of a Self-Powered ETO (SPETO)

Zhang, B., Huang, A. Q., Chen, B., Atcitty, S., & Ingram, M. (2006, November 1). IEEE Transactions on Industry Applications.

By: B. Zhang, A. Huang n, B. Chen n, S. Atcitty * & M. Ingram *

author keywords: base/gate drive suppression; emitter turn-off thyristor (ETO); gate turn-off thyristor (GTO); self-powered ETO (SPETO)
topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Advancements in Semiconductor Devices and Circuit Design; Electrostatic Discharge in Electronics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2006 article

Electrical and Physical Analysis of MoTa Alloy for Gate Electrode Applications

Chen, B., Biswas, N., & Misra, V. (2006, January 1). Journal of The Electrochemical Society, Vol. 153, pp. G417–419.

By: B. Chen n, N. Biswas n & V. Misra n 

topics (OpenAlex): Semiconductor materials and devices; Semiconductor materials and interfaces; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

High-Temperature Stability of Lanthanum Silicate Gate Dielectric MIS Devices with Ta and TaN Electrodes

Lichtenwalner, D. J., Jur, J. S., Jha, R., Inoue, N., Chen, B., Misra, V., & Kingon, A. I. (2006, January 1). Journal of The Electrochemical Society, Vol. 153, pp. F210–214.

By: D. Lichtenwalner*, J. Jur*, R. Jha n, N. Inoue*, B. Chen n, V. Misra n , A. Kingon*

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Advancements in Semiconductor Devices and Circuit Design
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

Chen, N. B., Jha, R., Lazar, H., Biswas, N., Lee, N. J., Lee, N. B., … Misra, V. (2006, April 1). IEEE Electron Device Letters, Vol. 27, pp. 228–230.

By: N. Chen n, R. Jha n, H. Lazar n, N. Biswas n, N. Lee n, N. Lee n, L. Wielunski*, E. Garfunkel *, V. Misra n 

author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion
topics (OpenAlex): Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 article

Work Function Tuning Via Interface Dipole by Ultrathin Reaction Layers Using AlTa and AlTaN Alloys

Chen, B., Jha, R., & Misra, V. (2006, August 29). IEEE Electron Device Letters, Vol. 27, pp. 731–733.

By: B. Chen n, R. Jha n & V. Misra n 

author keywords: AlTa; AlTaN; dipole; effective work function; metal gate
topics (OpenAlex): Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 article

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

Lin, Y., Öztürk, M. C., Chen, B., Rhee, S. J., Lee, J. C., & Misra, V. (2005, August 5). Applied Physics Letters, Vol. 87.

By: Y. Lin n, M. Öztürk n, B. Chen n, S. Rhee*, J. Lee * & V. Misra n 

topics (OpenAlex): Semiconductor materials and devices; Semiconductor materials and interfaces; Advancements in Semiconductor Devices and Circuit Design
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 article

Physical and electrical analysis of RuxYy alloys for gate electrode applications

Chen, B., Suh, Y., Lee, J., Gurganus, J., Misra, V., & Cabral, C. (2005, January 21). Applied Physics Letters, Vol. 86.

By: B. Chen n, Y. Suh n, J. Lee n, J. Gurganus n, V. Misra n  & C. Cabral *

topics (OpenAlex): Semiconductor materials and devices; Surface and Thin Film Phenomena; Electronic and Structural Properties of Oxides
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 article

Properties of Ta–Mo alloy gate electrode for n-MOSFET

Lee, C. K., Kim, J. Y., Hong, S. N., Zhong, H., Chen, B., & Misra, V. (2005, May 1). Journal of Materials Science, Vol. 40, pp. 2693–2695.

By: C. Lee*, J. Kim *, S. Hong*, H. Zhong*, B. Chen n & V. Misra n 

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Ferroelectric and Negative Capacitance Devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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