2006 article

Development and experimental demonstration of a self-powered ETO (SPETO)

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 42, pp. 1387–1394.

By: B. Zhang, A. Huang n, B. Chen n, S. Atcitty* & M. Ingram*

author keywords: base/gate drive suppression; emitter turn-off thyristor (ETO); gate turn-off thyristor (GTO); self-powered ETO (SPETO)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2006 journal article

Electrical and physical analysis of MoTa alloy for gate electrode applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(5), G417–G419.

By: B. Chen n, N. Biswas n & V. Misra n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214.

By: D. Lichtenwalner*, J. Jur*, R. Jha n, N. Inoue*, B. Chen n, V. Misra n, A. Kingon*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230.

By: B. Chen n, R. Jha n, H. Lazar n, N. Biswas n, J. Lee n, B. Lee n, L. Wielunski*, E. Garfunkel*, V. Misra n

author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2006 journal article

Work function tuning via interface dipole by ultrathin reaction layers using AlTa and AlTaN alloys

IEEE ELECTRON DEVICE LETTERS, 27(9), 731–733.

By: B. Chen n, R. Jha n & V. Misra n

author keywords: AlTa; AlTaN; dipole; effective work function; metal gate
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 journal article

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

APPLIED PHYSICS LETTERS, 87(7).

By: Y. Lin n, M. Ozturk n, B. Chen n, S. Rhee*, J. Lee* & V. Misra n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 journal article

Physical and electrical analysis of RuxYy alloys for gate electrode applications

APPLIED PHYSICS LETTERS, 86(5).

By: B. Chen n, Y. Suh n, J. Lee n, J. Gurganus n, V. Misra n & C. Cabral*

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2005 journal article

Properties of Ta-Mo alloy gate electrode for n-MOSFET

JOURNAL OF MATERIALS SCIENCE, 40(9-10), 2693–2695.

By: C. Lee*, J. Kim*, S. Hong*, H. Zhong*, B. Chen n & V. Misra n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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