2005 journal article

Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN

APPLIED SURFACE SCIENCE, 242(3-4), 428–436.

By: J. Hartman n, K. Naniwae n, C. Petrich n, R. Nemanich n & R. Davis n

author keywords: photo-emission electron microscopy; gallium nitride; aluminum nitride; silicon carbide; molecular beam epitaxy; stepped single crystal surfaces
Source: Web Of Science
Added: August 6, 2018

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