2008 journal article
Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range
APPLIED PHYSICS LETTERS, 92(10).
2008 journal article
Thermal conductivity of semi-insulating, p-type, and n-type GaN films on sapphire
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 26(3), 375–379.
Contributors: K. Jagannadham n, n & N. Elmasry n
2007 journal article
Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
APPLIED PHYSICS LETTERS, 90(15).
2007 journal article
Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature
APPLIED PHYSICS LETTERS, 90(25).
2005 journal article
Effect of doping on the magnetic properties of GaMnN: Fermi level engineering
APPLIED PHYSICS LETTERS, 86(10).
conference paper
Strain relaxation in InxGa1-xN/GaN quantum well structures
Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).
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