Tsvetanka S. Zheleva (Jeleva)

Zheleva, T., Lelis, A., Duscher, G., Liu, F., Levin, I., & Das, M. (2008). Transition layers at the SiO2/SiC interface. Applied Physics Letters, 93(2).

Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. Washington, DC: U.S. Patent and Trademark Office.

Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Second gallium nitride layers that extend into trenches in first gallium nitride layers. Washington, DC: U.S. Patent and Trademark Office.

Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Gallium nitride semiconductor structures including lateral gallium nitride layers. Washington, DC: U.S. Patent and Trademark Office.

Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth. Washington, DC: U.S. Patent and Trademark Office.

Zheleva, T. S., Nam, O.-H., Ashmawi, W. M., Griffin, J. D., & Davis, R. F. (2001, February 1). Lateral epitaxy and dislocation density reduction in selectively grown GaN structures. Journal of Crystal Growth. https://doi.org/10.1016/S0022-0248(00)00832-0

Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2001). Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., & Mehregany, M. (2001). Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates. Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., … Mehregany, M. (2001, May 1). Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization. Journal of Crystal Growth. https://doi.org/10.1016/S0022-0248(01)00836-3

Davis, R. F., Gehrke, T., Linthicum, K. J., Rajagopal, P., Roskowski, A. M., Zheleva, T., … Grober, R. (2001). Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates. MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

Davis, R. F., Nam, O. H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., & Rajagopal, P. (2000). Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films. Materials Science Forum, 338(3), 1471–1476.

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., & Mehregany, M. (2000). Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

Hanser, A. D., Nam, O.-H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March 1). Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1−xN. Diamond and Related Materials. https://doi.org/10.1016/S0925-9635(98)00341-0

Zheleva, T. S., Ashmawi, W. M., & Jones, K. A. (1999). Pendeo-epitaxy versus lateral epitaxial overgrowth of GaN: A comparative study via finite element analysis. Physica Status Solidi. A, Applications and Materials Science, 176(1), 545–551.

Zheleva, T. S., Smith, S. A., Thomson, D. B., Linthicum, K. J., Rajagopal, P., & Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films.

Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., … Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., … Davis, R. F. (1999). Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

Feldermann, H., Merk, R., Hofsäss, H., Ronning, C., & Zheleva, T. (1999, March 15). Room temperature growth of cubic boron nitride. Applied Physics Letters. https://doi.org/10.1063/1.123613

Zheleva, T. S., Ashmawi, W. M., Nam, O.-H., & Davis, R. F. (1999, April 26). Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures. Applied Physics Letters. https://doi.org/10.1063/1.123017

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April 1). Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates. Journal of Electronic Materials. https://doi.org/10.1007/s11664-998-0394-7

Perry, W. G., Bremser, M. B., Zheleva, T., Linthicum, K. J., & Davis, R. F. (1998, July 1). Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC. Thin Solid Films. https://doi.org/10.1016/S0040-6090(97)01217-0

Gruss, K. A., Zheleva, T., Davis, R. F., & Watkins, T. R. (1998, September 1). Characterization of zirconium nitride coatings deposited by cathodic arc sputtering. Surface and Coatings Technology. https://doi.org/10.1016/S0257-8972(98)00584-2

Järrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March 1). Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy. Vacuum. https://doi.org/10.1016/S0042-207X(97)00177-2

Nam, O.-H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. (1998, April 1). Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy. Journal of Electronic Materials. https://doi.org/10.1007/s11664-998-0393-8

Freitas, J. A., Nam, O. H., Zheleva, T. S., & Davis, R. F. (1998). Optical and structural properties of lateral epitaxial overgrown GaN layers. Journal of Crystal Growth, 190(1998 June), 92–96.

Kawaguchi, Y., Shimizu, M., Yamaguchi, M., Hiramatsu, K., Sawaki, N., Taki, W., … Davis, R. F. (1998). The formation of crystalline defects and crystal growth mechanism in InxGa1-xN/GaN heterostructure grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 190(1998 June), 24–28.

Zheleva, T. S., Nam, O.-H., Bremser, M. D., & Davis, R. F. (1997, October 27). Dislocation density reduction via lateral epitaxy in selectively grown GaN structures. Applied Physics Letters. https://doi.org/10.1063/1.120091

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March 1). Growth, doping and characterization of AlxGa1 − xN thin film alloys on 6H-SiC(0001) substrates. Diamond and Related Materials, Vol. 6, pp. 196–201. https://doi.org/10.1016/S0925-9635(96)00626-7

Nam, O.-H., Bremser, M. D., Zheleva, T. S., & Davis, R. F. (1997). Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Applied Physics Letters, 71(18), 2698–2640.

Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., … Aspnes, D. E. (1997, December 1). Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films. Materials Science and Engineering B, Vol. 50, pp. 134–141. https://doi.org/10.1016/s0921-5107(97)00151-7

Balkaş, C. M., Sitar, Z., Zheleva, T., Bergman, L., Nemanich, R., & Davis, R. F. (1997, August 1). Sublimation growth and characterization of bulk aluminum nitride single crystals. Journal of Crystal Growth. https://doi.org/10.1016/S0022-0248(97)00160-7

Hiramatsu, K., Kawaguchi, Y., Shimizu, M., Sawaki, N., Zheleva, T. S., Davis, R. F., … Oki, K. (1997). The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization. MRS Internet Journal of Nitride Semiconductor Research, 2(6).

Balkas, C. M., Sitar, Z., Zheleva, T., Bergman, L., Shmagin, I. K., Muth, J. F., … Davis, R. F. (1996). Growth of bulk AIN and GaN single crystals by sublimation. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.