@article{estrich_hook_smith_leonard_laughlin_maria_2013, title={Ga-doped ZnO conducting antireflection coatings for crystalline silicon solar cells}, volume={113}, ISSN={["0021-8979"]}, DOI={10.1063/1.4811538}, abstractNote={Transparent, conductive gallium-doped ZnO thin films are evaluated for application as conducting antireflection coatings (ARC) for crystalline silicon solar cells as a means to enhance efficiency by reducing the overall resistivity of the photovoltaic circuit. All Ga-doped ZnO thin films in this study were deposited using pulsed laser deposition. Synthesis conditions were first optimized for maximum electrical resistivity and minimal visible light absorption. The ideal combination contained 1 mol. % Ga doping and exhibited ∼90% transmission, with resistivity in the 1 × 10−3 ohm-cm range. Optimized films were prepared on reference flat silicon wafers with known dopant densities and on commercially obtained solar cell emitters without ARCs. Circular transmission line method measurements were used to measure specific contact resistivity (ρc). For n-type doped solar cell emitters, contact resistivity values of 0.1 mΩ cm2 were observed repeatedly. These values are consistent with, or lower than, contact resistivities associated with conventional silver paste metallization.}, number={23}, journal={JOURNAL OF APPLIED PHYSICS}, author={Estrich, N. A. and Hook, D. H. and Smith, A. N. and Leonard, J. T. and Laughlin, B. and Maria, J. -P.}, year={2013}, month={Jun} }
 @article{laughlin_ihlefeld_daniels_maria_2008, title={Flexible and lithography-compatible copper foil substrates for ferroelectric thin films}, volume={516}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2007.08.093}, abstractNote={A process has been developed for preparing a low surface roughness copper foil by evaporation and subsequent peel-off of copper metal layers on glass slides. These 15 micron thick substrates exhibited roughness values between 1 and 2 nm root-mean-square (RMS) and 9 nm RMS over 25 μm2 and 100 μm2 analysis areas, respectively. The deposition and crystallization of barium strontium titanate layers were demonstrated on these smoother variant foils. The fully processed dielectric layers exhibited field tunability greater than 5:1, and could withstand fields in excess of 750 kV/cm. High field loss tangents below 0.007 were observed, making these materials excellent candidates for microwave devices. Finally, a process of lamination and contact lithography was used to demonstrate patterning of micron-scale features suitable for microwave circuit element designs.}, number={10}, journal={THIN SOLID FILMS}, author={Laughlin, B. and Ihlefeld, J. F. and Daniels, Patrick and Maria, J. -P.}, year={2008}, month={Mar}, pages={3294–3297} }
 @article{rhodes_franzen_maria_losego_leonard_laughlin_duscher_weibel_2006, title={Surface plasmon resonance in conducting metal oxides}, volume={100}, ISSN={["1089-7550"]}, DOI={10.1063/1.2222070}, abstractNote={We report the initial observation of surface plasmon resonance (SPR) in a conducting metal oxide thin film. The SPR phenomenon has been observed by attenuated total reflection of near-infrared radiation and is in agreement with electron energy loss spectroscopy measurements. To date, only metals are known to exhibit surface plasmon resonance and only noble metals have practical application. According to theory SPR should be observable in any conductor. This theoretical prediction is verified in the present study. The compositions of many conducting metal oxides are systematically variable, suggesting a significant advance in thin film characterization and innovative possibilities for versatile and sensitive chemical sensing applications.}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Rhodes, Crissy and Franzen, Stefan and Maria, Jon-Paul and Losego, Mark and Leonard, Donovan N. and Laughlin, Brian and Duscher, Gerd and Weibel, Stephen}, year={2006}, month={Sep} }
 @article{ghosh_laughlin_nath_kingon_steer_maria_2006, title={Tunable high-quality-factor interdigitated (Ba, Sr)TiO3 capacitors fabricated on low-cost substrates with copper metallization}, volume={496}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2005.09.025}, abstractNote={Interdigitated capacitors containing the field-tunable ferroelectric Ba0.75Sr0.25TiO3, polycrystalline alumina substrates, and copper metallization have been fabricated. Dielectric layers were prepared by magnetron sputtering, while the Cu metallization was evaporated. The dielectric tunability of the Ba0.75Sr0.25TiO3 was 40% at an applied electric field of 12 V/μm. This corresponds to a 3-μm electrode gap width and a 35 V dc bias. Low-frequency (1 MHz) loss tangent measurements indicate a dielectric Q (quality factor) of ∼100 while microwave measurements reveal a zero bias device Q of ∼30 at 26 GHz. These values are comparable or superior to numerous reports of barium strontium titanate interdigitated capacitors prepared using single crystalline substrates and noble metallization. As such, this technology is significantly less expensive and more amenable to large-volume manufacturing.}, number={2}, journal={THIN SOLID FILMS}, author={Ghosh, D and Laughlin, B and Nath, J and Kingon, AI and Steer, MB and Maria, JP}, year={2006}, month={Feb}, pages={669–673} }
 @article{ihlefeld_laughlin_hunt-lowery_borland_kingon_maria_2005, title={Copper compatible barium titanate thin films for embedded passives}, volume={14}, ISSN={["1573-8663"]}, DOI={10.1007/s10832-005-0866-6}, number={2}, journal={JOURNAL OF ELECTROCERAMICS}, author={Ihlefeld, J and Laughlin, B and Hunt-Lowery, A and Borland, W and Kingon, A and Maria, JP}, year={2005}, month={Mar}, pages={95–102} }
 @article{ghosh_laughlin_nath_kingon_steer_maria_2005, title={High Q (Ba, Sr) TiO3 interdigitated capacitors fabricated on low cost polycrystalline alumina substrates with copper metallization}, volume={26}, DOI={10.1002/9780470291252.ch13}, abstractNote={Barium Strontium Titanate (BST) ferroelectric thin films are attractive for radio frequency and microwave applications. However, for many non-military uses, the high cost of conventionally processed devices is a limitingfactor. This high cost stems from the use of single-crystalline sapphire, MgO, or LaAlO 3 substrates and Pt or Au metallization commonly used. Here we present a device process and materials complement offering a low cost alternative. Planar interdigitated capacitors Ba 0 . 7 5 Sr 0 . 2 5 TiO 3 (BST) thin films with chromium/copper top electrodes were fabricated on polycrystalline alumina substrates using a single step photolithographic technique and lift-off. RF magnetron sputtering was used for fabrication of BST thin films while Cu thin films were thermally evaporated The dielectric tunability of the Ba 0 . 7 5 Sr 0 . 2 5 TiO 3 IDCs was 40 % for an applied electric field of 120 kV/cm, which corresponds to 3 μm electrode gap spacing and a 35 volt dc bias. Low frequency (1MHz) loss measurements reveal a dielectric Q ∼ 100 while a device Q of ∼ 30 is obtained at 26 GHz. The reduction of Q between 0.1 and 26 GHz can be attributed to the metallization. Leakage current measurements of the BST planar varactors show current densities of 1.0 x 10 - 6 A / cm 2 for an electric field of 100 kV/cm. These dielectric characteristics (tunability and Q value) are comparable to numerous reports of IDCs with BST films prepared on expensive single crystalline substrates using noble metallization. As such, this technology is significantly less expensive, and amenable to large volume manufacturing.}, number={5}, journal={Ceramic Engineering and Science Proceedings}, author={Ghosh, D. and Laughlin, B. J. and Nath, J. and Kingon, A. I. and Steer, M. B. and Maria, J. P.}, year={2005}, pages={125–132} }
 @article{laughlin_ihlefeld_maria_2005, title={Preparation of sputtered (Ba-x,Sr1-x)TiO3 thin films directly on copper}, volume={88}, ISSN={["1551-2916"]}, DOI={10.1111/j.1551-2916.2005.00488.x}, abstractNote={ (Ba0.6,Sr0.4)TiO3 (BST) films were deposited on copper foils by radio frequency magnetron sputtering. By the use of controlled pO2 high‐temperature anneals, the films were completely crystallized in the absence of substrate oxidation. X‐ray diffraction and transmission electron microscopy (TEM) revealed an abrupt Cu/BST interface. The deposited BST films exhibit a zero bias permittivity and loss tangent values of 600 and 0.018, respectively. An electrical tunability ratio of 3.5:1 is observed on these metal–insulator–metal devices. Devices show leakage currents of 10−8 A/cm2 at ±10 V/μm, and loss tangents as low as 0.003 in fields approaching 40 V/μm. }, number={9}, journal={JOURNAL OF THE AMERICAN CERAMIC SOCIETY}, author={Laughlin, B and Ihlefeld, J and Maria, JP}, year={2005}, month={Sep}, pages={2652–2654} }