@article{adekore_davis_barlage_2007, title={Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon}, volume={101}, number={2}, journal={Journal of Applied Physics}, author={Adekore, B. T. and Davis, R. F. and Barlage, D. W.}, year={2007} }
 @article{adekore_pierce_davisb_barlage_muth_2007, title={Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films}, volume={102}, ISSN={["1089-7550"]}, DOI={10.1063/1.2751097}, abstractNote={Bulk single crystals of unintentionally doped ZnO having charge carrier concentration, ND−NA values of ∼1017 cm−3 were implanted with N+ ions at dosages of 1015 and 1016 cm−2 at 95 keV to a depth of 150 nm. The resulting p−n structure having acceptor concentrations ranging from 1017 to 1018 cm−3 was compared with nitrogen doped homoepitaxial films with ∼8×1017 cm−3 acceptors. Photoluminescence spectra acquired at 8 K showed an increase in the peak for the neutral donor-bound to acceptor-bound transition at 3.210 eV with increasing annealing temperature, thermal activation of a unique donor to acceptor transition due to nitrogen at 3.067 and 3.057 eV for implanted and epitaxial films, respectively; and an increase in the intensity of the defect-related green band at selected temperatures. Electroluminescence measurements at 300 K revealed an ultraviolet band, direct band-to-band recombination at 3.34 eV, donor-acceptor pair recombinations at 3.19 and 3.0 eV, and recombination in the green region centered at 2.49 eV. Current-voltage characteristics of implanted and homoepitaxial p−n diodes were also determined.}, number={2}, journal={JOURNAL OF APPLIED PHYSICS}, author={Adekore, B. T. and Pierce, J. M. and Davisb, R. F. and Barlage, D. W. and Muth, J. F.}, year={2007}, month={Jul} }
 @article{adekore_callahan_bouthillette_dalmau_sitar_2007, title={Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route}, volume={308}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2007.07.058}, abstractNote={Gallium nitride (GaN) crystals doped with erbium were grown via the ammonothermal processes on hydride vapor phase epitaxy (HVPE) GaN seeds. The crystallization conducted in alkaline solutions of supercritical ammonia and potassium azide (KN3) at temperatures between 525 and 550 °C yielded growth rates of 15 and 50 μm day on the gallium and nitrogen polar faces, respectively. X-ray diffraction studies indicated single-crystalline growth on the N-polar surface while the Ga-polar surfaces resulted in polycrystalline growth. Photoluminescence spectra acquired at 15 K showed optical transitions corresponding to the inner shell transitions of erbium centers as well as a strong band edge and blue luminescence peaks centered at 3.495 and 2.90 eV, respectively. The incorporation of unintentional impurities, such as oxygen, was found by secondary ion mass spectroscopy (SIMS) to be mitigated to ∼1×1019 and ∼7×1019 cm−3 on the gallium and nitrogen polar faces, respectively.}, number={1}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Adekore, B. T. and Callahan, M. J. and Bouthillette, L. and Dalmau, R. and Sitar, Z.}, year={2007}, month={Oct}, pages={71–79} }
 @article{adekore_rakes_wang_callahan_pendurti_sitar_2006, title={Ammonothermal synthesis of aluminum nitride crystals on group III-nitride templates}, volume={35}, ISSN={["1543-186X"]}, DOI={10.1007/BF02692573}, number={5}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Adekore, B. T. and Rakes, K. and Wang, B. and Callahan, M. J. and Pendurti, S. and Sitar, Z.}, year={2006}, month={May}, pages={1104–1111} }
 @article{pierce_adekore_davis_stevie_2005, title={Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence}, volume={277}, ISSN={["1873-5002"]}, DOI={10.1016/j.jcrysgro.2005.01.054}, abstractNote={Dense zinc oxide thin films have been achieved on GaN(0 0 0 1) epilayers via the repetition of an iterative sequence involving the growth at 480 °C of needles having a decreasing diameter as a function of height followed by the lateral growth from the sidewalls of these needles and coalescence of the growth fronts at 800 °C. Each sequence resulted in a contiguous layer having a thickness of approximately 200 nm. Diethylzinc and UHP oxygen were used as sources of zinc and atomic oxygen, respectively; UHP argon served as both the carrier and the diluent gas. The final growth surface of each densified film contained hexagonal depressions caused by growth among needles of different heights and growth pits that increased in number with an increase in film thickness. These microstructural features were manifest upon and affected the densities and magnitudes of similar features produced in subsequent layers. Triple-axis X-ray diffraction measurements revealed that the orientations of the crystallographic planes and directions within the films mimicked those of the underlying GaN substrate. Concentrations of carbon and hydrogen oscillated throughout the films due to their incorporation primarily within the lower and larger volumes of the needles during each low-temperature deposition of this microstructure.}, number={1-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Pierce, JM and Adekore, BT and Davis, RF and Stevie, FA}, year={2005}, month={Apr}, pages={345–351} }
 @article{pierce_adekore_davis_stevie_2005, title={Homoepitaxial growth of dense ZnO(0001) and ZnO (1120) films via MOVPE on selected ZnO substrates}, volume={283}, number={02-Jan}, journal={Journal of Crystal Growth}, author={Pierce, J. M. and Adekore, B. T. and Davis, R. F. and Stevie, F. A.}, year={2005}, pages={147–155} }