Hughes Spalding Craft

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

JOURNAL OF MATERIALS RESEARCH, 31(1), 36–45.

Epitaxial PbxZr1-xTiO3 on GaN

JOURNAL OF APPLIED PHYSICS, 113(7).

Epitaxial lead zirconate titanate on gallium nitride (vol 113, 074107, 2013)

Journal of Applied Physics, Vol. 114.

Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN

APPLIED PHYSICS LETTERS, 98(8).

Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux

JOURNAL OF MATERIALS RESEARCH, 25(4), 670–679.

Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces

Journal of Crystal Growth, 311(4), 1106–1109.

Barrier layer mechanism engineering in calcium copper titanate thin film capacitors through microstructure control

JOURNAL OF APPLIED PHYSICS, 104(11).

High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control

Applied Physics Letters, 92(11), 112912.

Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

APPLIED PHYSICS LETTERS, 92(8).

Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 26(6), 1507–1510.

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

JOURNAL OF APPLIED PHYSICS, 102(7).

MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy

APPLIED PHYSICS LETTERS, 88(21).

Molecular beam epitaxy of Sm2O3, Dy2O3, and Ho2O3 on Si (111)

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 24, pp. 2105–2110.

Thermal stability of amorphous LaScO3 films on silicon

APPLIED PHYSICS LETTERS, 89(6).

Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si(001)

APPLIED PHYSICS LETTERS, 86(20).