@article{vogel_ahmed_hornung_henson_mclarty_lucovsky_hauser_wortman_1998, title={Modeled tunnel currents for high dielectric constant dielectrics}, volume={45}, ISSN={["0018-9383"]}, DOI={10.1109/16.678572}, abstractNote={The effect of dielectric constant and barrier height on the WKB modeled tunnel currents of MOS capacitors with effective oxide thickness of 2.0 nm is described. We first present the WKB numerical model used to determine the tunneling currents. The results of this model indicate that alternative dielectrics with higher dielectric constants show lower tunneling currents than SiO/sub 2/ at expected operating voltages. The results of SiO/sub 2//alternative dielectric stacks indicate currents which are asymmetric with electric field direction. The tunneling current of these stacks at low biases decreases with decreasing SiO/sub 2/ thickness. Furthermore, as the dielectric constant of an insulator increased, the effect of a thin layer of SiO/sub 2/ on the current characteristics of the dielectric stack increases.}, number={6}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Vogel, EM and Ahmed, KZ and Hornung, B and Henson, WK and McLarty, PK and Lucovsky, G and Hauser, JR and Wortman, JJ}, year={1998}, month={Jun}, pages={1350–1355} }
 @misc{sridevan_mclarty_baliga_1998, title={Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance}, volume={5,742,076}, number={1998 Apr. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sridevan, S. and McLarty, P. K. and Baliga, B. J.}, year={1998}, month={Apr} }
 @article{morfouli_ghibaudo_vogel_hill_misra_mclarty_wortman_1997, title={Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition}, volume={41}, ISSN={["0038-1101"]}, DOI={10.1016/S0038-1101(97)00019-1}, abstractNote={The electrical properties and reliability issues of MOSFETs with an ultra thin silicon oxinitride gate film (5 nm up to 8.5 nm), prepared by low pressure rapid thermal chemical vapor deposition are studied with the goal to evaluate the impact of the nitridation on the electrical properties of MOSFETs. More specifically, the wear-out and breakdown features of oxinitride dielectrics are investigated as a function of the nitrogen concentration in the film. The charge building up in the insulator bulk was evaluated while the interface reliability parameters were extracted from charge pumping and transfer characteristics measurements after constant current gate stress (1 mA cm−2). The optimum nitridation rate for minimizing the charge building up is shown to be 2–3%. However the charge-to-breakdown was found to decrease continuously after nitridation.}, number={7}, journal={SOLID-STATE ELECTRONICS}, author={Morfouli, P and Ghibaudo, G and Vogel, EM and Hill, WL and Misra, V and McLarty, PK and Wortman, JJ}, year={1997}, month={Jul}, pages={1051–1055} }