Yanxia Lin

Lin, Y. X., Ozturk, M. C., Chen, B., Rhee, S. J., Lee, J. C., & Misra, V. (2005). Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels. APPLIED PHYSICS LETTERS, 87(7). https://doi.org/10.1063/1.2009809