2007 journal article

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

APPLIED PHYSICS LETTERS, 90(20).

Source: Web Of Science
Added: August 6, 2018

2005 journal article

Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 15(10), 664–666.

author keywords: AlGaN/GaN heterostructure field-effect transistors (HFETs); metal oxide semiconductor (MOS) capacitors; modeling
Source: Web Of Science
Added: August 6, 2018

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