2007 article

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

Saripalli, Y. N., Pei, L., Biggerstaff, T., Ramachandran, S., Duscher, G. J., Johnson, M. A. L., … Barlage, D. W. (2007, May 14). Applied Physics Letters.

By: Y. Saripalli n, L. Pei n, T. Biggerstaff n, S. Ramachandran n, G. Duscher n, M. Johnson n, C. Zeng n, K. Dandu n, Y. Jin n, D. Barlage n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

2005 article

Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

Dandu, K., Saripalli, Y., Braddock, D., Johnson, M., & Barlage, D. W. (2005, September 26). IEEE Microwave and Wireless Components Letters.

author keywords: AlGaN/GaN heterostructure field-effect transistors (HFETs); metal oxide semiconductor (MOS) capacitors; modeling
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
Source: Web Of Science
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2026) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.