@article{saripalli_pei_biggerstaff_ramachandran_duscher_johnson_zeng_dandu_jin_barlage_2007, title={Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications}, volume={90}, ISSN={["1077-3118"]}, DOI={10.1063/1.2741123}, abstractNote={Contact selected area regrowth of GaN was performed by metal organic chemical vapor deposition using a silicon nitride dielectric hard mask to define plasma etched recesses and to define source-drain regions. A low temperature regrowth process at 750–850°C was adopted to limit lateral overgrowth. High resolution electron microscopy images and selected area diffraction confirmed the regrowth selectivity and revealed that the low temperature regrown GaN is epitaxial and has a wurtzite crystal structure. I-V characteristics of the fabricated metal oxidesemiconductor field effect transistor show enhancement mode operation.}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Saripalli, Y. N. and Pei, L. and Biggerstaff, T. and Ramachandran, S. and Duscher, G. J. and Johnson, M. A. L. and Zeng, C. and Dandu, K. and Jin, Y. and Barlage, D. W.}, year={2007}, month={May} }
 @article{dandu_saripalli_braddock_johnson_barlage_2005, title={Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling}, volume={15}, ISSN={["1531-1309"]}, DOI={10.1109/LMWC.2005.856680}, abstractNote={Dual mode AlGaN/GaN metal oxide semiconductor (MOS) heterostructure field-effect transistor (HFET) devices were fabricated and characterized. In HFET mode of operation the devices showed an f/sub t//spl middot/L/sub g/ product of 12GHz/spl middot//spl mu/m at Vgs=-2 V. The AlGaN devices showed formation of an accumulation layer under the gate in forward bias and a f/sub t//spl middot/L/sub g/ product of 6GHz/spl middot//spl mu/m was measured at Vgs=5 V. A novel piecewise small signal model for the gate capacitance of MOS HFET devices is presented and procedures to extract the capacitance in presence of gate leakage are outlined. The model accurately fits measured data from 45MHz to 10GHz over the entire bias range of operation of the device.}, number={10}, journal={IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS}, author={Dandu, K and Saripalli, Y and Braddock, D and Johnson, M and Barlage, DW}, year={2005}, month={Oct}, pages={664–666} }