Yoganand Nrusimha Saripalli

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

Applied Physics Letters, 90(20).

Optical characterization of Eu-doped beta-Ga2O3 thin films

Applied Physics Letters, 88(22).

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride

Journal of Applied Physics, 99(12).

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Journal of Crystal Growth, 287(2), 562–565.

SIMS quantification of matrix and impurity species in AlxGa1-xN

Applied Surface Science, 252(19), 7228–7231.

Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

IEEE Microwave and Wireless Components Letters, 15(10), 664–666.