Yoganand Nrusimha Saripalli

Works (6)

Updated: July 5th, 2023 15:56

2007 journal article

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

APPLIED PHYSICS LETTERS, 90(20).

By: Y. Saripalli n, L. Pei n, T. Biggerstaff n, S. Ramachandran n, G. Duscher n, M. Johnson  n, C. Zeng n, K. Dandu n, Y. Jin n, D. Barlage n

Source: Web Of Science
Added: August 6, 2018

2006 journal article

Optical characterization of Eu-doped β-Ga2O3 thin films

Applied Physics Letters, 88(22), 221906.

By: P. Gollakota n, A. Dhawan  n, P. Wellenius n, L. Lunardi n , J. Muth n, Y. Saripalli n, H. Peng *, H. Everitt *

Contributors: P. Gollakota n, A. Dhawan  n, P. Wellenius n, L. Lunardi n , J. Muth n, Y. Saripalli n, H. Peng *, H. Everitt *

UN Sustainable Development Goal Categories
Sources: Web Of Science, ORCID, Crossref, NC State University Libraries
Added: August 6, 2018

2006 journal article

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride

JOURNAL OF APPLIED PHYSICS, 99(12).

By: D. Wang*, M. Park*, Y. Saripalli n, M. Johnson  n, C. Zeng n, D. Barlage n, J. Long n

Source: Web Of Science
Added: August 6, 2018

2006 article

SIMS quantification of matrix and impurity species in AlxGa1-xN

Gu, C. J., Stevie, F. A., Hitzman, C. J., Saripalli, Y. N., Johnson, M., & Griffis, D. P. (2006, July 30). APPLIED SURFACE SCIENCE, Vol. 252, pp. 7228–7231.

By: C. Gu n, F. Stevie n, C. Hitzman*, Y. Saripalli n, M. Johnson  n & D. Griffis n

author keywords: SIMS; aluminum gallium nitride (AlGaN); quantification; calibration curve
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 15(10), 664–666.

By: K. Dandu n, Y. Saripalli n, D. Braddock  n, M. Johnson  n & D. Barlage n

author keywords: AlGaN/GaN heterostructure field-effect transistors (HFETs); metal oxide semiconductor (MOS) capacitors; modeling
Source: Web Of Science
Added: August 6, 2018

2005 article

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.

By: Y. Saripalli n, C. Zeng n, J. Long n, D. Barlage n, M. Johnson  n & D. Braddock

author keywords: ohmic contacts; MOVPE; selected area re-growth; GaN; MOSFET
Source: Web Of Science
Added: August 6, 2018

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