2007 journal article
Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications
APPLIED PHYSICS LETTERS, 90(20).
2006 journal article
Optical characterization of Eu-doped β-Ga2O3 thin films
Applied Physics Letters, 88(22), 221906.
2006 journal article
Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride
JOURNAL OF APPLIED PHYSICS, 99(12).
2006 article
Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts
Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.
2006 article
SIMS quantification of matrix and impurity species in AlxGa1-xN
Gu, C. J., Stevie, F. A., Hitzman, C. J., Saripalli, Y. N., Johnson, M., & Griffis, D. P. (2006, July 30). APPLIED SURFACE SCIENCE, Vol. 252, pp. 7228–7231.
2005 journal article
Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 15(10), 664–666.
