@article{govindaraju_aleksov_li_okuzumi_wolter_collazo_prater_sitar_2006, title={Comparative study of textured diamond films by thermal conductivity measurements}, volume={85}, ISSN={["1432-0630"]}, DOI={10.1007/s00339-006-3697-7}, number={3}, journal={APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING}, author={Govindaraju, N. and Aleksov, A. and Li, X. and Okuzumi, F. and Wolter, S. D. and Collazo, R. and Prater, J. T. and Sitar, Z.}, year={2006}, month={Nov}, pages={331–335} }
 @article{li_perkins_collazo_nemanich_sitar_2006, title={Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD}, volume={15}, ISSN={["1879-0062"]}, DOI={10.1016/j.diamond.2006.09.008}, abstractNote={The influence of total gas pressure (50–125 Torr) and methane concentration (0.75%–10%) on diamond growth by microwave plasma chemical vapor deposition (MPCVD) was investigated. Within the regimes studied, the growth rate was proportional to the methane concentration in the source gas while it exhibited a super-linear dependence on total pressure. For a fixed methane concentration, characterization by Raman spectroscopy, scanning electron microscopy and X-ray diffraction indicated there was a minimum pressure required for the growth of large grain diamond, and conversely, for a fixed pressure, there was a maximum methane concentration that yielded diamond deposition. Higher pressures and higher carbon concentrations yielded diamond growth rates more than 10 times higher than achieved by the conventional low pressure MPCVD process.}, number={11-12}, journal={DIAMOND AND RELATED MATERIALS}, author={Li, Xianglin and Perkins, James and Collazo, Ramon and Nemanich, Robert J. and Sitar, Zlatko}, year={2006}, pages={1784–1788} }
 @article{aleksov_gobien_li_prater_sitar_2006, title={Silicon-on-diamond - An engineered substrate for electronic applications}, volume={15}, ISSN={["0925-9635"]}, DOI={10.1016/j.diamond.2005.09.012}, abstractNote={Silicon on Diamond (SOD) is a substrate engineered to address the major challenges of silicon-based ULSI technology, in particular, to provide for enhanced thermal management and charge confinement. The SOD concept is achieved by joining a thin, single crystalline Si device layer to a highly oriented diamond (HOD) layer that serves as an electrical insulator, heat spreader and supporting substrate. Therefore, SOD represents an alternative SOI concept, where the thermally insulating SiO2 has been replaced by highly thermally conductive diamond. Initial experiments and theoretical assessments have been aimed at demonstrating the improved thermal management properties of fabricated SOD wafers and comparing them to Si and SOI [A. Aleksov, X. Li, N. Govindaraju, J.M. Gobien, S.D. Wolter, J.T. Prater, Z. Sitar, Silicon on Diamond: an advanced Silicon on Insulator technology, Diamond and Related Materials, 14, 308–313 (2005).], [A. Aleksov, S.D. Wolter, J.T. Prater, Z. Sitar, Fabrication and Thermal Evaluation of Silicon on Diamond Wafers, Journal of Electronic Materials, 34 (2005) 1089.]. The experimental results are in good agreement with the values obtained by finite element modeling (FEM). The results show that for a 1.5 μm thick Si device layer, SOD can sustain more than 10 times higher power than SOI. This in turn will permit a more than 3-fold greater integration density of circuits fabricated on SOD as compared to SOI. Having validated the superior thermal management properties of SOD, the second task has been to compare device operation on SOD and SOI to identify whether the Si layer degrades during the SOD fabrication process. In addition, the analysis of the interface properties between the Si device layer and diamond is important in order to better understand the operation of devices on SOD and identify their limitations. For this reason, Schottky and pn-junction diodes were fabricated on the Si device layer of SOD and SOI wafers. The first results of the electrical analyses indicated that there are no additional leakage currents in SOD devices compared to devices on SOI. In addition, CV measurements indicated no differences in the device behavior i.e. no additional charge trapping with respect to SOI in the frequency range of 1 kHz–10 MHz.}, number={2-3}, journal={DIAMOND AND RELATED MATERIALS}, author={Aleksov, A and Gobien, JM and Li, X and Prater, JT and Sitar, Z}, year={2006}, pages={248–253} }