Works (6)

Updated: July 5th, 2023 16:04

2001 journal article

Self-assembled AlInGaN quaternary superlattice structures

APPLIED PHYSICS LETTERS, 79(11), 1616–1618.

By: N. El-Masry n, M. Behbehani n, S. LeBoeuf n, M. Aumer n, J. Roberts n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(15), 2202–2204.

By: M. Behbehani n, E. Piner n, S. Liu n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

APPLIED PHYSICS LETTERS, 70(4), 461–463.

By: E. Piner n, M. Behbehani n, N. ElMasry n, F. McIntosh n, J. Roberts n, K. Boutros n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 article

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.

By: F. McIntosh*, E. Piner, J. Roberts*, M. Behbehani*, M. Aumer*, N. ElMasry, S. Bedair*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

By: E. Piner n, M. Behbehani n, N. ElMasry n, J. Roberts n, F. McIntosh n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.

By: V. Joshkin n, J. Roberts n, F. McIntosh n, S. Bedair n, E. Piner n & M. Behbehani n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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