Karim S. Boutros

Works (2)

Updated: July 5th, 2023 16:04

1997 article

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

Piner, E. L., Behbehani, M. K., El-Masry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., & Bedair, S. M. (1997, January 27). Applied Physics Letters.

By: E. Piner n, M. Behbehani n, N. El-Masry n, F. McIntosh n, J. Roberts n, K. Boutros n, S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
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Source: Web Of Science
Added: August 6, 2018

1997 article

Growth and characterization of In-based nitride compounds

Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & El-Masry, N. A. (1997, June 1). Journal of Crystal Growth.

By: S. Bedair n, F. McIntosh n, J. Roberts n, E. Piner n, K. Boutros* & N. El-Masry n

author keywords: InGaN; ALE; MOCVD; quantum wells; growth model
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor Quantum Structures and Devices
Source: Web Of Science
Added: August 6, 2018

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