Boyan I. Boyanov

Cobalt suicide formation on 6H silicon carbide

Porto, A. O., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1999, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 6, pp. 188–189.

Estimation of uncertainties in XAFS data

Newville, M., Boyanov, B. I., & Sayers, D. E. (1999, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 6, pp. 264–265.

Germanium segregation in the Co/SiGe/Si(001) thin film system

JOURNAL OF MATERIALS RESEARCH, 14(11), 4372–4384.

Growth of epitaxial CoSi2 on SiGe(001)

JOURNAL OF APPLIED PHYSICS, 86(3), 1355–1362.

Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si (100)

JOURNAL OF APPLIED PHYSICS, 85(7), 3614–3618.

The effect of germanium on the Co-SiGe thin-film reaction

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1999, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 6, pp. 521–523.

Co-deposition of cobalt disilicide on silicon-germanium thin films

THIN SOLID FILMS, 320(2), 206–210.

Film thickness effects in the Co-Si1-xGex solid phase reaction

JOURNAL OF APPLIED PHYSICS, 84(8), 4285–4291.

In situ studies of metal-semiconductor interactions with synchrotron radiation

Sayers, D. E., Goeller, P. T., Boyanov, B. I., & Nemanich, R. J. (1998, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 5, pp. 1050–1051.

A coupling-of-modes approach to the analysis of STW devices

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 44(3), 652–657.

Preferential Co-SI bonding at the Co/SiGe(100) interface

Applied Physics Letters, 71(21), 3060–3062.

Structure and stability of cobalt-silicon-germanium thin films

Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997, December). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 133, pp. 84–89.