Works (42)

2005 patent

Method for depositing in particular crystalline layers, and device for carrying out the method

Washington, DC: U.S. Patent and Trademark Office.

By: M. Bremser, M. Dauelsberg & G. Strauch

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structures including lateral gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-resolved photoluminescence in strained GaN layers

Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.

By: G. Pozina, N. Edwards, J. Bergman, B. Monemar, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition

Applied Physics Letters, 78(8), 1062–1064.

By: G. Pozina, N. Edwards, J. Bergman, T. Paskova, B. Monemar, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Optical characterization of wide bandgap semiconductors

Thin Solid Films, 364(1-2), 98–106.

By: N. Edwards, M. Bremser, A. Batchelor, I. Buyanova, L. Madsen, S. Yoo, T. Welhkamp, K. Wilmers ...

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride

Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.

By: I. Buyanova, M. Wagner, W. Chen, N. Edwards, B. Monemar, J. Lindstrom, M. Bremser, R. Davis, H. Amano, I. Akasaki

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999)

Applied Physics Letters, 75(20), 3225A.

By: C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Evidence for localized Si-donor state and its metastable properties in AlGaN

Applied Physics Letters, 74(25), 3833–3835.

By: C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN

Diamond and Related Materials, 8(2-5), 288–294.

By: A. Hanser, O. Nam, M. Bremser, D. Thomson, T. Gehrke, T. Zheleva, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).

By: E. Kaminska, A. Piotrowska, J. Jasinski, J. Kozubowski, A. Barcz, K. Golaszewska, D. Thomson, R. Davis, M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Observation of highly dispersive surface states on GaN(0001)1x1

Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586–15589.

By: Y. Chao, C. Stagarescu, J. Downes, P. Ryan, K. Smith, D. Hanser, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).

By: N. Edwards, A. Batchelor, I. Buyanova, L. Madsen, M. Bremser, R. Davis, D. Aspnes, B. Monemar

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Stimulated emission in GaN thin films in the temperature range of 300-700 K

Journal of Applied Physics, 85(3), 1792–1795.

By: S. Bidnyk, B. Little, T. Schmidt, Y. Cho, J. Krasinski, J. Song, B. Goldenberg, W. Yang ...

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Acceptor and donor doping of AlxGa1 xN thin film alloys grown on 6H SiC(0001) substrates via metalorganic vapor phase epitaxy

Journal of Electronic Materials, 27(4), 229–232.

By: M. Bremser, W. Perry, O. Nam, D. Griffis, R. Loesing, D. Ricks, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Cathodoluminescence studies of the deep level emission bands of AlxGa1 xN films deposited on 6H SiC(0001)

Journal of Applied Physics, 83(1), 469–475.

By: W. Perry, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Cleaning of AlN and GaN surfaces

Journal of Applied Physics, 84(9), 5248–5260.

By: S. King, J. Barnak, M. Bremser, K. Tracy, C. Ronning, R. Davis, R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Interfacial microstructure of Ni/Si-based ohmic contacts to GaN

Acta Physica Polonica. A, 94(3), 383–386.

By: E. Kaminska, A. Piotrowska, J. Jasinski, J. Kozubowski, A. Barcz, K. Golaszewska, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Intrinsic exciton transitions in GaN

Journal of Applied Physics, 83(1), 455–461.

By: W. Shan, A. Fischer, S. Hwang, B. Little, R. Hauenstein, X. Xie, J. Song, S. Kim ...

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance

Applied Physics Letters, 73(13), 1760–1762.

By: P. Wisniewski, W. Knap, J. Malzac, J. Camassel, M. Bremser, R. Davis, T. Suski

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Journal of Electronic Materials, 27(4), 233–237.

By: O. Nam, T. Zheleva, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Lattice site location studies of ion implanted Li-8 in GaN

Journal of Applied Physics, 84(6), 3085–3089.

By: M. Dalmer, M. Restle, M. Sebastian, U. Vetter, H. Hofsass, M. Bremser, C. Ronning, R. Davis, U. Wahl, K. Bharuth-Ram

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Photoelectrochemical capacitance-voltage measurements in GaN

Journal of Electronic Materials, 27(5), L26–28.

By: C. Stutz, M. Mack, M. Bremser, O. Nam, R. Davis & D. Look

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Thin Solid Films, 313(1998 Feb.), 187–192.

By: N. Edwards, S. Yoo, M. Bremser, M. Horton, N. Perkins, T. Weeks, H. Liu, R. Stall ...

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Trends in residual stress for GaN/AlN/6H-SiC heterostructures

Applied Physics Letters, 73(19), 2808–2810.

By: N. Edwards, M. Bremser, R. Davis, A. Batchelor, S. Yoo, C. Karan, D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Applied Physics Letters, 71(17), 2472–2474.

By: T. Zheleva, O. Nam, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Solid-State Electronics, 41(2), 129–134.

By: R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

Journal of the European Ceramic Society, 17(15-16), 1775–1779.

By: R. Davis, M. Bremser, W. Perry & K. Ailey

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of gan and a1(0.2)ga(0.8)n on patterned substrates via organometallic vapor phase epitaxy

Japanese Journal of Applied Physics. Part 2, Letters, 36(5a), L532–535.

By: O. Nam, M. Bremser, B. Ward, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth, doping and characterization of Al(x)Ga(1-x)N thin film alloys on 6H-SiC(0001) substrates

Diamond and Related Materials, 6(2-4), 196–201.

By: M. Bremser, W. Perry, T. Zheleva, N. Edwards, O. Nam, N. Parikh, D. Aspnes, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

Applied Physics Letters, 71(25), 3631–3633.

By: S. Smith, C. Wolden, M. Bremser, A. Hanser, R. Davis & W. Lampert

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

ION Implantation of epitaxial GaN films: damage, doping and activation

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 127(1997 May), 463–466.

By: N. Parikh, A. Suvkhanov, M. Lioubtchenko, E. Carlson, M. Bremser, D. Bray, R. Davis, J. Hunn

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

By: U. Rossow, N. Edwards, M. Bremser, R. Kern, H. Liu, R. Davis, D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied Physics Letters, 71(18), 2698–2640.

By: O. Nam, M. Bremser, T. Zheleva & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Ohmic contacts to GaN by solid phase regrowth

Acta Physica Polonica. A, 92(4), 819–823.

By: E. Kaminska, A. Piotrowska, A. Barcz, L. Ilka, M. Guziewicz, S. Kasjaniuk, E. Dynowska, S. Kwiatkowski, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Raman analysis of the configurational disorder in AlxGa1-xN films

Applied Physics Letters, 71(15), 2157–2159.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 50(1-3), 134–141.

By: N. Edwards, S. Yoo, M. Bremser, T. Zheleva, M. Horton, N. Perkins, T. Weeks, H. Liu ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Applied Physics Letters, 71(16), 2289–2291.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Variation of GaN valence bands with biaxial stress and quantification of residual stress

Applied Physics Letters, 70(1997), 2001.

By: N. Edwards, M. Bremser, T. Weeks, O. Nam, R. Davis, H. Liu, R. Stall, M. Horton ...

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.

By: N. Edwards, S. Yoo, M. Bremser, M. Horton, N. Perkins, T. Weeks, H. Liu, R. Stall ...

Source: NC State University Libraries
Added: August 6, 2018

1996 journal article

Strain-related phenomena in GaN thin films

Physical Review. B, Condensed Matter and Materials Physics, 54(24), 17745–17753.

By: C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. Ager, E. Jones, Z. Lilientalweber, M. Rubin ...

Source: NC State University Libraries
Added: August 6, 2018