Works (42)

Updated: July 5th, 2023 16:04

2005 patent

Method for depositing in particular crystalline layers, and device for carrying out the method

Washington, DC: U.S. Patent and Trademark Office.

By: M. Bremser, M. Dauelsberg & G. Strauch

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structures including lateral gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-resolved photoluminescence in strained GaN layers

Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.

By: G. Pozina, N. Edwards, J. Bergman, B. Monemar, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 78(8), 1062–1064.

By: G. Pozina*, N. Edwards*, J. Bergman*, T. Paskova*, B. Monemar, M. Bremser n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

2000 patent

Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Washington, DC: U.S. Patent and Trademark Office.

By: R. Davis, O. Nam, T. Zheleva & M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Optical characterization of wide bandgap semiconductors

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). THIN SOLID FILMS, Vol. 364, pp. 98–106.

By: N. Edwards*, M. Bremser n, A. Batchelor n, I. Buyanova*, L. Madsen*, S. Yoo n, T. Welhkamp, K. Wilmers* ...

author keywords: GaN; strain; valence bands; reflectance; excitons; reciprocal space analysis; spectroscopic ellipsometry
Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride

Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.

By: I. Buyanova, M. Wagner, W. Chen, N. Edwards, B. Monemar, J. Lindstrom, M. Bremser, R. Davis, H. Amano, I. Akasaki

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999)

Applied Physics Letters, 75(20), 3225A.

By: C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Evidence for localized Si-donor state and its metastable properties in AlGaN

APPLIED PHYSICS LETTERS, 74(25), 3833–3835.

By: C. Skierbiszewski*, T. Suski*, M. Leszczynski*, M. Shin*, M. Skowronski*, M. Bremser n, R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN

Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March). DIAMOND AND RELATED MATERIALS, Vol. 8, pp. 288–294.

By: A. Hanser n, O. Nam n, M. Bremser n, D. Thomson n, T. Gehrke n, T. Zheleva n, R. Davis n

author keywords: AlN; thin films; patterned structures; GaN
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).

By: E. Kaminska, A. Piotrowska, J. Jasinski, J. Kozubowski, A. Barcz, K. Golaszewska, D. Thomson, R. Davis, M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Observation of highly dispersive surface states on GaN(0001)1x1

Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586–15589.

By: Y. Chao, C. Stagarescu, J. Downes, P. Ryan, K. Smith, D. Hanser, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).

By: N. Edwards*, A. Batchelor*, I. Buyanova*, L. Madsen*, M. Bremser n, R. Davis n, D. Aspnes n, B. Monemar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

1999 journal article

Stimulated emission in GaN thin films in the temperature range of 300-700 K

JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795.

By: S. Bidnyk*, B. Little*, T. Schmidt*, Y. Cho*, J. Krasinski*, J. Song*, B. Goldenberg*, W. Yang* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 article

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.

By: M. Bremser n, W. Perry n, O. Nam n, D. Griffis n, R. Loesing n, D. Ricks n, R. Davis*

author keywords: 6H-SiC(0001); acceptor doping; AlxGa1-xN; GaN; charge scattering; donor doping; electron mobility
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001)

JOURNAL OF APPLIED PHYSICS, 83(1), 469–475.

By: W. Perry n, M. Bremser n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Cleaning of AlN and GaN surfaces

JOURNAL OF APPLIED PHYSICS, 84(9), 5248–5260.

By: S. King n, J. Barnak n, M. Bremser n, K. Tracy n, C. Ronning n, R. Davis n, R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

1998 article

Interfacial microstructure of Ni/Si-based ohmic contacts to GaN

Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., … Davis, R. F. (1998, September). ACTA PHYSICA POLONICA A, Vol. 94, pp. 383–386.

By: E. Kaminska*, A. Piotrowska*, J. Jasinski*, J. Kozubowski*, A. Barcz*, K. Golaszewska*, M. Bremser*, R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Intrinsic exciton transitions in GaN

JOURNAL OF APPLIED PHYSICS, 83(1), 455–461.

By: W. Shan*, A. Fischer*, S. Hwang*, B. Little*, R. Hauenstein*, X. Xie*, J. Song*, S. Kim* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance

APPLIED PHYSICS LETTERS, 73(13), 1760–1762.

By: P. Wisniewski*, W. Knap*, J. Malzac*, J. Camassel*, M. Bremser n, R. Davis n, T. Suski*

Source: Web Of Science
Added: August 6, 2018

1998 article

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Nam, O. H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 233–237.

By: O. Nam n, T. Zheleva n, M. Bremser n & R. Davis n

author keywords: coalescence; gallium nitride (GaN); lateral epitaxial overgrowth; metalorganic vapor phase epitaxy (MOVPE); selective growth
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Lattice site location studies of ion implanted Li-8 in GaN

JOURNAL OF APPLIED PHYSICS, 84(6), 3085–3089.

By: M. Dalmer, M. Restle, M. Sebastian, U. Vetter, H. Hofsass, M. Bremser*, C. Ronning*, R. Davis*, U. Wahl, K. Bharuth-Ram

Source: Web Of Science
Added: August 6, 2018

1998 personal communication

Photoelectrochemical capacitance-voltage measurements in GaN

Stutz, C. E., Mack, M., Bremser, M. D., Nam, O. H., Davis, R. F., & Look, D. C. (1998, May).

By: C. Stutz, M. Mack*, M. Bremser n, O. Nam n, R. Davis n & D. Look*

author keywords: carrier concentration depth profile; GaN; photoelectrochemical etching
Source: Web Of Science
Added: August 6, 2018

1998 article

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 187–192.

By: N. Edwards*, S. Yoo*, M. Bremser*, M. Horton, N. Perkins, T. Weeks*, H. Liu, R. Stall ...

author keywords: GaN; spectroscopic ellipsometry; reflectance; valence bands; excitons; reciprocal space analysis
Sources: Web Of Science, ORCID
Added: August 6, 2018

1998 journal article

Trends in residual stress for GaN/AlN/6H-SiC heterostructures

APPLIED PHYSICS LETTERS, 73(19), 2808–2810.

By: N. Edwards n, M. Bremser n, R. Davis n, A. Batchelor n, S. Yoo n, C. Karan n, D. Aspnes n

Sources: Web Of Science, ORCID
Added: August 6, 2018

1997 journal article

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

APPLIED PHYSICS LETTERS, 71(17), 2472–2474.

By: T. Zheleva n, O. Nam n, M. Bremser n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134.

By: R. Davis n, T. Weeks n, M. Bremser n, S. Tanaka n, R. Kern n, Z. Sitar n, K. Ailey n, W. Perry n, C. Wang n

UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol. 17, pp. 1775–1779.

By: R. Davis n, M. Bremser n, W. Perry n & K. Ailey n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36(5A), L532–L535.

By: O. Nam n, M. Bremser n, B. Ward n, R. Nemanich n & R. Davis n

author keywords: GaN; AlGaN; 6H-SiC; selective growth; organometallic vapor phase epitaxy; hexagonal pyramid array; field emission; lateral diffusion
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201.

By: M. Bremser n, W. Perry n, T. Zheleva n, N. Edwards n, O. Nam n, N. Parikh*, D. Aspnes n, R. Davis n

author keywords: GaN; alloy; AlGaN epitaxy; SiC substrates
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

1997 journal article

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

APPLIED PHYSICS LETTERS, 71(25), 3631–3633.

By: S. Smith n, C. Wolden n, M. Bremser n, A. Hanser n, R. Davis n & W. Lampert*

Source: Web Of Science
Added: August 6, 2018

1997 conference paper

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

By: U. Rossow n, N. Edwards n, M. Bremser n, R. Kern n, H. Liu*, R. Davis n, D. Aspnes n

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

1997 article

Ion implantation of epitaxial GaN films: Damage, doping and activation

Parikh, N., Suvkhanov, A., Lioubtchenko, M., Carlson, E., Bremser, M., Bray, D., … Hunn, J. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 463–466.

By: N. Parikh*, A. Suvkhanov*, M. Lioubtchenko*, E. Carlson n, M. Bremser n, D. Bray n, R. Davis n, J. Hunn*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied Physics Letters, 71(18), 2698–2640.

By: O. Nam, M. Bremser, T. Zheleva & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 article

Ohmic contacts to GaN by solid-phase regrowth

Kaminska, E., Piotrowska, A., Barcz, A., Ilka, L., Guziewicz, M., Kasjaniuk, S., … Davis, R. F. (1997, October). ACTA PHYSICA POLONICA A, Vol. 92, pp. 819–823.

By: E. Kaminska*, A. Piotrowska*, A. Barcz*, L. Ilka*, M. Guziewicz*, S. Kasjaniuk*, E. Dynowska*, S. Kwiatkowski*, M. Bremser n, R. Davis n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Raman analysis of the configurational disorder in AlxGa1-xN films

APPLIED PHYSICS LETTERS, 71(15), 2157–2159.

By: L. Bergman n, M. Bremser n, W. Perry n, R. Davis n, M. Dutta n & R. Nemanich n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141.

By: N. Edwards n, S. Yoo n, M. Bremser n, T. Zheleva n, M. Horton*, N. Perkins*, T. Weeks n, H. Liu* ...

author keywords: GaN thin films; spectroscopic ellipsometry; bandedge phenomena
Sources: Web Of Science, ORCID
Added: August 6, 2018

1997 journal article

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Applied Physics Letters, 71(16), 2289–2291.

By: A. Sowers n, J. Christman n, M. Bremser n, B. Ward n, R. Davis n & R. Nemanich n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Variation of GaN valence bands with biaxial stress and quantification of residual stress

APPLIED PHYSICS LETTERS, 70(15), 2001–2003.

By: N. Edwards n, S. Yoo n, M. Bremser n, T. Weeks n, O. Nam n, R. Davis n, H. Liu, R. Stall ...

Sources: Web Of Science, ORCID
Added: August 6, 2018

1997 conference paper

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.

By: N. Edwards n, S. Yoo n, M. Bremser n, M. Horton*, N. Perkins*, T. Weeks n, H. Liu*, R. Stall* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

1996 journal article

Strain-related phenomena in GaN thin films

Physical Review. B, Condensed Matter and Materials Physics, 54(24), 17745–17753.

By: C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. Ager, E. Jones, Z. Lilientalweber, M. Rubin ...

Source: NC State University Libraries
Added: August 6, 2018

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