Michael D. Bremser

Method for depositing in particular crystalline layers, and device for carrying out the method

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride semiconductor structures including lateral gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

Washington, DC: U.S. Patent and Trademark Office.

Time-resolved photoluminescence in strained GaN layers

Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.

Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 78(8), 1062–1064.

Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Washington, DC: U.S. Patent and Trademark Office.

Optical characterization of wide bandgap semiconductors

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). THIN SOLID FILMS, Vol. 364, pp. 98–106.

Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride

Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.

Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999)

Applied Physics Letters, 75(20), 3225A.

Evidence for localized Si-donor state and its metastable properties in AlGaN

APPLIED PHYSICS LETTERS, 74(25), 3833–3835.

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN

Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March). DIAMOND AND RELATED MATERIALS, Vol. 8, pp. 288–294.

Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).

Observation of highly dispersive surface states on GaN(0001)1x1

Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586–15589.

Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).

Stimulated emission in GaN thin films in the temperature range of 300-700 K

JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795.

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.

Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001)

JOURNAL OF APPLIED PHYSICS, 83(1), 469–475.

Cleaning of AlN and GaN surfaces

JOURNAL OF APPLIED PHYSICS, 84(9), 5248–5260.

Interfacial microstructure of Ni/Si-based ohmic contacts to GaN

Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., … Davis, R. F. (1998, September). ACTA PHYSICA POLONICA A, Vol. 94, pp. 383–386.

Intrinsic exciton transitions in GaN

JOURNAL OF APPLIED PHYSICS, 83(1), 455–461.

Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance

APPLIED PHYSICS LETTERS, 73(13), 1760–1762.

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Nam, O. H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 233–237.

Lattice site location studies of ion implanted Li-8 in GaN

JOURNAL OF APPLIED PHYSICS, 84(6), 3085–3089.

Photoelectrochemical capacitance-voltage measurements in GaN

Stutz, C. E., Mack, M., Bremser, M. D., Nam, O. H., Davis, R. F., & Look, D. C. (1998, May).

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 187–192.

Trends in residual stress for GaN/AlN/6H-SiC heterostructures

APPLIED PHYSICS LETTERS, 73(19), 2808–2810.

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

APPLIED PHYSICS LETTERS, 71(17), 2472–2474.

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134.

Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol. 17, pp. 1775–1779.

Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36(5A), L532–L535.

Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201.

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

APPLIED PHYSICS LETTERS, 71(25), 3631–3633.

Ion implantation of epitaxial GaN films: Damage, doping and activation

Parikh, N., Suvkhanov, A., Lioubtchenko, M., Carlson, E., Bremser, M., Bray, D., … Hunn, J. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 463–466.

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied Physics Letters, 71(18), 2698–2640.

Ohmic contacts to GaN by solid-phase regrowth

Kaminska, E., Piotrowska, A., Barcz, A., Ilka, L., Guziewicz, M., Kasjaniuk, S., … Davis, R. F. (1997, October). ACTA PHYSICA POLONICA A, Vol. 92, pp. 819–823.

Raman analysis of the configurational disorder in AlxGa1-xN films

APPLIED PHYSICS LETTERS, 71(15), 2157–2159.

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141.

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Applied Physics Letters, 71(16), 2289–2291.

Variation of GaN valence bands with biaxial stress and quantification of residual stress

APPLIED PHYSICS LETTERS, 70(15), 2001–2003.

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

Strain-related phenomena in GaN thin films

Physical Review. B, Condensed Matter and Materials Physics, 54(24), 17745–17753.

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.