@article{kim_park_han_jeon_kim_noguchi_choi_2007, title={Fabrication of polycrystalline silicon thin film transistors in array patterns by field-aided lateral crystallization technique}, volume={46}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.46.1258}, abstractNote={As a crystallization process, the field-aided lateral crystallization (FALC) technique has some outstanding advantages, such as high crystallization rate and low process temperature. In this study, an array of polycrystalline silicon thin film transistors (TFTs) was fabricated on a corning 1737 glass substrate using Ni catalyst. The electric field applied through common electrodes connected to the source and drain led to directional crystallization from the negative-electrode side to the positive-electrode side at 550 °C. The applied electric field induced elongated grains with an accelerated crystal growth rate. As a result, each TFT channel showed not only a uniform crystallization rate but also homogeneous grain morphology. All of these crystallization behaviors are attributed to the electrical properties of the TFT array such as field effect mobility, threshold voltage, and on/off current ratio.}, number={3B}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS}, author={Kim, Hyun-Chul and Park, Chan-Jun and Han, Tae-Seok and Jeon, Hyeon-Pyo and Kim, Young-Bae and Noguchi, Takashi and Choi, Duck-Kyun}, year={2007}, month={Mar}, pages={1258–1262} }
 @article{maida_fukayama_takahashi_kobayashi_kim_kim_choi_2006, title={Interface states for HfO2/Si structure observed by x-ray photoelectron spectroscopy measurements under bias}, volume={89}, number={12}, journal={Applied Physics Letters}, author={Maida, O. and Fukayama, K. and Takahashi, M. and Kobayashi, H. and Kim, Y. B. and Kim, H. C. and Choi, D. K.}, year={2006}, pages={122112} }