@article{park_sowers_rinne_schlesser_bergman_nemanich_sitar_hren_cuomo_zhirnov_et al._1999, title={Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond}, volume={17}, ISSN={["2166-2746"]}, DOI={10.1116/1.590630}, abstractNote={Two different types of the nitrogen-doped chemical vapor deposited (CVD) diamond films were synthesized with N2 (nitrogen) and C3H6N6 (melamine) as doping sources. The samples were analyzed by scanning electron microscopy, Raman scattering, photoluminescence spectroscopy, and field-emission measurements. More effective substitutional nitrogen doping was achieved with C3H6N6 than with N2. The diamond film doped with N2 contained a significant amount of nondiamond carbon phases. The sample produced with N2 exhibited a lower field emission turn-on field than the sample produced with C3H6N6. It is believed that the presence of the graphitic phases (or amorphous sp2 carbon) at the grain boundaries of the diamond and/or the nanocrystallinity (or microcrystallinity) of the diamond play a significant role in lowering the turn-on field of the film produced using N2. It is speculated that substitutional nitrogen doping plays only a minor role in changing the field emission characteristics of CVD diamond films.}, number={2}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Park, M and Sowers, AT and Rinne, CL and Schlesser, R and Bergman, L and Nemanich, RJ and Sitar, Z and Hren, JJ and Cuomo, JJ and Zhirnov, VV and et al.}, year={1999}, pages={734–739} }
 @article{kang_zhirnov_wojak_preble_choi_hren_cuomo_1999, title={Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement}, volume={17}, ISSN={["1071-1023"]}, DOI={10.1116/1.590608}, abstractNote={The effects of the aluminum nitride coating thickness on molybdenum emitter tips were investigated by an in situ I–V measurement technique inside a typical magnetron sputtering system. AlN was deposited on Mo tips using a dc-modulated 1 kW power source at 200 °C. Each I/V measurement was carried out immediately following a 15 s AlN deposition. Significantly improved field emission was observed as well as a strong emission thickness dependence, which we attribute to the influence of space charge.}, number={2}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Kang, DH and Zhirnov, VV and Wojak, GJ and Preble, EA and Choi, WB and Hren, JJ and Cuomo, JJ}, year={1999}, pages={632–634} }
 @article{park_mcgregor_bergman_nemanich_hren_cuomo_choi_zhirnov_1999, title={Raman analysis and field emission study of ion beam etched diamond films}, volume={17}, ISSN={["2166-2746"]}, DOI={10.1116/1.590622}, abstractNote={Discontinuous diamond films were deposited on silicon using a microwave plasma chemical vapor deposition system. The diamond deposits were sharpened by argon ion beam etching. Raman spectroscopy was carried out to study the structural change of the diamond after ion beam bombardment. It was found that amorphous sp2 carbon is produced as diamond is being sputtered by the Ar ion beam. The field emission turn-on field was also drastically lowered after sharpening, which, it is speculated, is caused by field enhancement due to change in geometry and/or structural changes (such as amorphization of crystalline diamond into graphitic or amorphous sp2 carbon) by Ar ion irradiation.}, number={2}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Park, M and McGregor, DR and Bergman, L and Nemanich, RJ and Hren, JJ and Cuomo, JJ and Choi, WB and Zhirnov, VV}, year={1999}, pages={700–704} }
 @article{choi_schlesser_wojak_cuomo_sitar_hren_1998, title={Electron energy distribution of diamond-coated field emitters}, volume={16}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Choi, W. B. and Schlesser, R. and Wojak, G. and Cuomo, J. J. and Sitar, Z. and Hren, J. J.}, year={1998}, month={Mar}, pages={716–719} }
 @article{park_choi_streiffer_hren_cuomo_1998, title={Secondary electron emission patterning of diamond with hydrogen and oxygen plasmas}, volume={72}, ISSN={["0003-6951"]}, DOI={10.1063/1.121424}, abstractNote={Secondary electron emission patterning of single crystal diamond surfaces with hydrogen and oxygen plasma treatments was demonstrated. Hydrogen plasma treated regions were much brighter than the oxygen terminated regions. Results of atomic force microscopy confirmed that the observed contrast is not topographical. Several other possible negative electron affinity (or low positive electron affinity) materials such as chemical vapor deposited (CVD) diamond, aluminum nitride, and tetrahedrally bonded amorphous carbon (txa−C1−x) were also investigated. Faint image contrast (patterning) was also observed from polycrystalline CVD diamond and polycrystalline aluminum nitride films; however, no contrast at all was obtained from tetrahedrally bonded amorphous carbon (txa−C1−x) films.}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Park, M and Choi, WB and Streiffer, SK and Hren, JJ and Cuomo, JJ}, year={1998}, month={May}, pages={2580–2582} }
 @article{schlesser_mcclure_choi_hren_sitar_1997, title={Energy distribution of field emitted electrons from diamond coated molybdenum tips}, volume={70}, ISSN={["0003-6951"]}, DOI={10.1063/1.118626}, abstractNote={Field emission energy distribution (FEED) measurements were performed on Mo and diamond coated Mo tips under ultrahigh vacuum conditions to investigate the origin of field emitted electrons. Mo emitters were prepared by electrochemical etching and were subsequently coated with diamond powder by a dielectrophoretic procedure. Field emission energy spectra were taken on the same samples before and after diamond coating. In vacuo thermal annealing of coated samples was essential to obtain stable field emission. FEED data indicated that the field emission current originated from the diamond/vacuum interface, and that electrons were emitted from the conduction band minimum of diamond.}, number={12}, journal={APPLIED PHYSICS LETTERS}, author={Schlesser, R and McClure, MT and Choi, WB and Hren, JJ and Sitar, Z}, year={1997}, month={Mar}, pages={1596–1598} }
 @article{ding_choi_myers_sharma_narayan_cuomo_hren_1997, title={Field emission enhancement from Mo tip emitters coated with N containing amorphous diamond films}, volume={94}, number={1-3}, journal={Surface & Coatings Technology}, author={Ding, M. Q. and Choi, W. B. and Myers, A. F. and Sharma, A. K. and Narayan, J. and Cuomo, J. J. and Hren, J. J.}, year={1997}, pages={672–675} }
 @article{ding_myers_choi_vispute_camphausen_narayan_cuomo_hren_bruley_1997, title={Field emission from amorphous diamond coated Mo tip emitters by pulsed laser deposition}, volume={15}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ding, M. Q. and Myers, A. F. and Choi, W. B. and Vispute, R. D. and Camphausen, S. M. and Narayan, J. and Cuomo, J. J. and Hren, J. J. and Bruley, J.}, year={1997}, pages={840–844} }
 @article{zhirnov_wojak_choi_cuomo_hren_1997, title={Wide band gap materials for field emission devices}, volume={15}, ISSN={["1520-8559"]}, DOI={10.1116/1.580929}, abstractNote={An analysis of wide band gap materials from the point of view of their application in cold emission devices is presented, and criteria of material choice for device application are discussed. Not only material but also technological parameters are taken into consideration. Among the material parameters, the following were found to be the most important; electron affinity, dielectric constant, thermal conductivity, melting point, chemical and physical robustness. The major technological parameter is compatibility of the material deposition process with commercially available facilities and other steps of cathode fabrication. It was shown that wide band gap materials are most effective for emission if deposited on sharp conductive tips. Experimental results from diamond, AlN, c-BN, and SiO2 field emitters are presented and some possible mechanisms explaining their I–V characteristics are discussed.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Zhirnov, VV and Wojak, GJ and Choi, WB and Cuomo, JJ and Hren, JJ}, year={1997}, pages={1733–1738} }