1997 journal article

Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315.

By: P. ONeil, M. Ozturk, K. Violette, D. Batchelor, K. Christensen & D. Maher

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications

Applied Physics Letters, 71(23), 3388–3390.

By: V. Li, M. Mirabedini, R. Kuehn, J. Wortman, M. Ozturk, D. Batchelor, K. Christensen, D. Maher

Source: NC State University Libraries
Added: August 6, 2018