1997 journal article
Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315.
1997 journal article
Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications
Applied Physics Letters, 71(23), 3388–3390.
Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.
Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.