Bruce B. Claflin

Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2154–2158.

Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1757–1761.

Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal

Lucovsky, G., Koh, K., Chaflin, B., & Hinds, B. (1998, January). APPLIED SURFACE SCIENCE, Vol. 123, pp. 490–495.

Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing

Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997, June). MICROELECTRONIC ENGINEERING, Vol. 36, pp. 207–210.