Bruce B. Claflin

Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2154–2158.

Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(3 pt.2), 1757–1761.

Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal

Applied Surface Science, 123(1998 Jan.), 490–495.

Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1074–1079.