1998 journal article
Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2154–2158.
1998 article
Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 16, pp. 1757–1761.
1998 article
Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal
Lucovsky, G., Koh, K., Chaflin, B., & Hinds, B. (1998, January). APPLIED SURFACE SCIENCE, Vol. 123, pp. 490–495.
1997 article
Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing
Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997, June). MICROELECTRONIC ENGINEERING, Vol. 36, pp. 207–210.
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