@article{morales_stoute_yu_aspnes_dickey_2016, title={Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides}, volume={109}, ISSN={["1077-3118"]}, url={https://doi.org/10.1063/1.4961910}, DOI={10.1063/1.4961910}, abstractNote={Liquid metals based on gallium are promising materials for soft, stretchable, and shape reconfigurable electromagnetic devices. The behavior of these metals relates directly to the thicknesses of their surface oxide layers, which can be determined nondestructively by ellipsometry if their dielectric functions ε are known. This paper reports on the dielectric functions of liquid gallium and the eutectic gallium indium (EGaIn) alloy from 1.24 to 3.1 eV at room temperature, measured by spectroscopic ellipsometry. Overlayer-induced artifacts, a continuing problem in optical measurements of these highly reactive metals, are eliminated by applying an electrochemically reductive potential to the surface of the metal immersed in an electrolyte. This technique enables measurements at ambient conditions while avoiding the complications associated with removing overlayers in a vacuum environment. The dielectric responses of both metals are closely represented by the Drude model. The EGaIn data suggest that in the absence of an oxide the surface is In-enriched, consistent with the previous vacuum-based studies. Possible reasons for discrepancies with previous measurements are discussed.}, number={9}, journal={APPLIED PHYSICS LETTERS}, publisher={AIP Publishing}, author={Morales, Daniel and Stoute, Nicholas A. and Yu, Zhiyuan and Aspnes, David E. and Dickey, Michael D.}, year={2016}, month={Aug} }
 @article{choi_aspnes_stoute_kim_kim_chang_palmstrom_2008, title={Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters}, volume={205}, ISSN={["1862-6300"]}, DOI={10.1002/pssa.200777848}, abstractNote={Abstract}, number={4}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, author={Choi, S. G. and Aspnes, D. E. and Stoute, N. A. and Kim, Y. D. and Kim, H. J. and Chang, Y. -C. and Palmstrom, C. J.}, year={2008}, month={Apr}, pages={884–887} }
 @article{lucovsky_hinkle_fulton_stoute_seo_luning_2006, title={Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2}, volume={75}, ISSN={["0969-806X"]}, DOI={10.1016/j.radphyschem.2005.07.062}, abstractNote={Defects ∼0.5–0.8 eV below the conduction band edge, contributing to trap-assisted tunneling and Frenkel–Poole transport have been reported for injection from n-type Si into SiO2–HfO2 dielectrics. Band edge spectroscopic measurements, combined with X-ray absorption spectroscopy, have identified localized defect states at this energy below the conduction band edges of HfO2, and ZrO2. Capacitance–voltage and cathodoluminescence studies, combined with band edge spectroscopy have identified an interfacial trap associated with oxygen atom vacancies as well.}, number={11}, journal={RADIATION PHYSICS AND CHEMISTRY}, author={Lucovsky, G. and Hinkle, C. L. and Fulton, C. C. and Stoute, N. A. and Seo, H. and Luning, J.}, year={2006}, month={Nov}, pages={2097–2101} }
 @article{lucovsky_fulton_ju_stoute_tao_aspnes_luening_2006, title={Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3}, volume={75}, ISSN={["0969-806X"]}, DOI={10.1016/j.radphyschem.2006.05.004}, abstractNote={Jahn–Teller (J–T) term-split states in nanocrystalline transition metal and trivalent rare earth elemental and complex oxides reduce the band gap, and tunnelling barrier height at interfaces with crystalline Si substrates. These states are identified by x-ray absorption spectroscopy and spectroscopic ellipsometry. Alloys for suppression of J–T d-state degeneracy removal are identified as: (i) non-crystalline Zr/Hf silicates and Si oxynitrides and (ii) ZrO2–Y2O3 alloys with high concentrations of randomly distributed O-vacancies that promote cubic crystalline symmetry.}, number={11}, journal={RADIATION PHYSICS AND CHEMISTRY}, author={Lucovsky, G. and Fulton, C. C. and Ju, B. S. and Stoute, N. A. and Tao, S. and Aspnes, D. E. and Luening, J.}, year={2006}, month={Nov}, pages={1591–1595} }