Works (9)
Updated: July 5th, 2023 15:55
2009 journal article
An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel
JOURNAL OF DISPLAY TECHNOLOGY, 5(12), 438–445.
Contributors: P. Wellenius n, n, H. Luo n, L. Lunardi n & J. Muth n
author keywords: Amorphous semiconductors (AOS); electroluminescent (EL) devices; flat panel displays; thin-film transistors (TFTs)
TL;DR:
A rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT is demonstrated and it is demonstrated that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology.
(via Semantic Scholar)
Sources: Web Of Science, ORCID
Added: August 6, 2018
2009 journal article
Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric
APPLIED PHYSICS LETTERS, 94(12).
author keywords: electron traps; gallium compounds; indium compounds; platinum; random-access storage; semiconductor materials; semiconductor thin films; thin film transistors
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018
2008 article
A visible transparent electroluminescent europium doped gallium oxide device
Wellenius, P., Suresh, A., Foreman, J. V., Everitt, H. O., & Muth, J. F. (2008, January 15). MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 146, pp. 252–255.
author keywords: electroluminescence; gallium oxide; europium; phosphor
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2008 journal article
Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
APPLIED PHYSICS LETTERS, 92(3).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2008 journal article
Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric
APPLIED PHYSICS LETTERS, 92(22).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018
2008 article
Transparent, high mobility of InGaZnO thin films deposited by PLD
Suresh, A., Gollakota, P., Wellenius, P., Dhawan, A., & Muth, J. F. (2008, February 15). THIN SOLID FILMS, Vol. 516, pp. 1326–1329.
author keywords: AOS; amorphous semiconductor; amorphous oxide semiconductor; IGZO; a-IGZO; PLD; mobility; transparent conducting oxide; TCO
Source: Web Of Science
Added: August 6, 2018
2007 article
High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, pp. 587–590.
Source: Web Of Science
Added: August 6, 2018
2007 journal article
Planar ZnO ultraviolet modulator
APPLIED PHYSICS LETTERS, 91(7).
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
9. Industry, Innovation and Infrastructure
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2007 journal article
Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors
APPLIED PHYSICS LETTERS, 90(12).
Source: Web Of Science
Added: August 6, 2018
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