2009 journal article

Carbon clusters as possible defects in the SiC-SiO2 interface

Journal of Computational and Theoretical Nanoscience, 6(6), 1305–1310.

By: H. Dang, R. Gudipati, Y. Liu, Y. Li, Y. Liu, H. Peterson, M. Chisholm, T. Biggerstaff, G. Duscher, S. Wang

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Relationship between 4H-SiC/SiO2 transition layer thickness and mobility

Applied Physics Letters, 95(3).

By: T. Biggerstaff, C. Reynolds, T. Zheleva, A. Lelis, D. Habersat, S. Haney, S. Ryu, A. Agarwal, G. Duscher

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

Applied Physics Letters, 90(20).

By: Y. Saripalli, L. Pei, T. Biggerstaff, S. Ramachandran, G. Duscher, M. Johnson, C. Zeng, K. Dandu, Y. Jin, D. Barlage

Source: NC State University Libraries
Added: August 6, 2018