2009 journal article

Carbon Clusters as Possible Defects in the SiC-SiO2 Interface

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 6(6), 1305–1310.

By: H. Dang, R. Gudipati, Y. Liu, Y. Li, Y. Liu, H. Peterson, M. Chisholm, T. Biggerstaff*, G. Duscher, S. Wang

author keywords: First-Principles Quantum-Mechanical Calculations; Density Functional Theory; Electronic Structure; Wide Gap Semiconductors; Silicon Carbide; Silicon Dioxide; Interface States; Defects; Carbon Clusters; Carbon Fullerence
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Relationship between 4H-SiC/SiO2 transition layer thickness and mobility

APPLIED PHYSICS LETTERS, 95(3).

By: T. Biggerstaff n, C. Reynolds n, T. Zheleva*, A. Lelis*, D. Habersat*, S. Haney*, S. Ryu*, A. Agarwal*, G. Duscher n

author keywords: aluminium; annealing; crystal microstructure; electron energy loss spectra; interface states; MOSFET; semiconductor thin films; silicon compounds; surface chemistry; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

APPLIED PHYSICS LETTERS, 90(20).

By: Y. Saripalli n, L. Pei n, T. Biggerstaff n, S. Ramachandran n, G. Duscher n, M. Johnson n, C. Zeng n, K. Dandu n, Y. Jin n, D. Barlage n

Source: Web Of Science
Added: August 6, 2018

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