@article{pei_duscher_steen_pichler_ssel_napolitani_de salvador_piro_terrasi_severac_et al._2008, title={Detailed arsenic concentration profiles at Si/SiO2 interfaces}, volume={104}, number={4}, journal={Journal of Applied Physics}, author={Pei, L. and Duscher, G. and Steen, C. and Pichler, P. and Ssel, H. R. and Napolitani, E. and De Salvador, D. and Piro, A. M. and Terrasi, A. T. and Severac, F. and et al.}, year={2008} }
 @article{steen_martinez-limia_pichler_ryssel_paul_lerch_pei_duscher_severac_cristiano_et al._2008, title={stee Distribution and segregation of arsenic at the SiO2/Si interface}, volume={104}, number={2}, journal={Journal of Applied Physics}, author={Steen, C. and Martinez-Limia, A. and Pichler, P. and Ryssel, H. and Paul, S. and Lerch, W. and Pei, L. and Duscher, G. and Severac, F. and Cristiano, F. and et al.}, year={2008} }
 @article{saripalli_pei_biggerstaff_ramachandran_duscher_johnson_zeng_dandu_jin_barlage_2007, title={Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications}, volume={90}, ISSN={["1077-3118"]}, DOI={10.1063/1.2741123}, abstractNote={Contact selected area regrowth of GaN was performed by metal organic chemical vapor deposition using a silicon nitride dielectric hard mask to define plasma etched recesses and to define source-drain regions. A low temperature regrowth process at 750–850°C was adopted to limit lateral overgrowth. High resolution electron microscopy images and selected area diffraction confirmed the regrowth selectivity and revealed that the low temperature regrown GaN is epitaxial and has a wurtzite crystal structure. I-V characteristics of the fabricated metal oxidesemiconductor field effect transistor show enhancement mode operation.}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Saripalli, Y. N. and Pei, L. and Biggerstaff, T. and Ramachandran, S. and Duscher, G. J. and Johnson, M. A. L. and Zeng, C. and Dandu, K. and Jin, Y. and Barlage, D. W.}, year={2007}, month={May} }