Lei Ma

Works (2)

Updated: July 5th, 2023 15:55

2010 journal article

An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration

SOLID-STATE ELECTRONICS, 54(12), 1680–1685.

By: J. Park  n, A. Ozbek n, L. Ma n, M. Veety n, M. Morgensen n, D. Barlage n, V. Wheeler n, M. Johnson n

author keywords: GaN; MOSFET; Schottky Source/Drain; Schottky barrier; Gate to Source overlap structure; Gate induced Schottky barrier lowering
Source: Web Of Science
Added: August 6, 2018

2007 personal communication

Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs

Jin, Y., Zeng, C., Ma, L., & Barlage, D. (2007, March).

By: Y. Jin*, C. Zeng*, L. Ma* & D. Barlage*

author keywords: MOSFET; device modeling; analytical models; threshold voltage; double gate; FinFET; tri-gate; triple gate; undoped; inversion; TCAD simulation
Source: Web Of Science
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.