Lei Ma

Works (2)

Updated: July 5th, 2023 15:55
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2010 journal article

An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration

SOLID-STATE ELECTRONICS, 54(12), 1680–1685.

By: J. Park n, A. Ozbek n, L. Ma n, M. Veety n, M. Morgensen n, D. Barlage n, V. Wheeler n, M. Johnson n

co-author countries: United States of America 🇺🇸
author keywords: GaN; MOSFET; Schottky Source/Drain; Schottky barrier; Gate to Source overlap structure; Gate induced Schottky barrier lowering
Source: Web Of Science
Added: August 6, 2018

2007 personal communication

Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs

Jin, Y., Zeng, C., Ma, L., & Barlage, D. (2007, March).

By: Y. Jin*, C. Zeng*, L. Ma* & D. Barlage*

author keywords: MOSFET; device modeling; analytical models; threshold voltage; double gate; FinFET; tri-gate; triple gate; undoped; inversion; TCAD simulation
Source: Web Of Science
Added: August 6, 2018