Works (4)

Updated: July 5th, 2023 15:54

2010 journal article

Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 28(4), 583–589.

By: X. Liu n & D. Aspnes n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition

Applied Physics Letters, 94(25).

By: X. Liu & D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Thickness inhomogenities in the organometallic chemical vapor deposition of GaP

APPLIED PHYSICS LETTERS, 93(20).

By: X. Liu n & D. Aspnes n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: catalysis; desorption; diffusion; gallium compounds; III-V semiconductors; MOCVD; semiconductor growth; semiconductor thin films
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 article

Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)SI

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 25, pp. 1448–1452.

By: X. Liu n, I. Kim n & D. Aspnes n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Web Of Science, ORCID
Added: August 6, 2018