Peter T. Goeller

Germanium segregation in the Co/SiGe/Si(001) thin film system

JOURNAL OF MATERIALS RESEARCH, 14(11), 4372–4384.

Growth of epitaxial CoSi2 on SiGe(001)

JOURNAL OF APPLIED PHYSICS, 86(3), 1355–1362.

The effect of germanium on the Co-SiGe thin-film reaction

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1999, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 6, pp. 521–523.

Co-deposition of cobalt disilicide on silicon-germanium thin films

THIN SOLID FILMS, 320(2), 206–210.

Film thickness effects in the Co-Si1-xGex solid phase reaction

JOURNAL OF APPLIED PHYSICS, 84(8), 4285–4291.

In situ studies of metal-semiconductor interactions with synchrotron radiation

Sayers, D. E., Goeller, P. T., Boyanov, B. I., & Nemanich, R. J. (1998, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 5, pp. 1050–1051.

An integrated growth and analysis system for in-situ XAS studies of metal-semiconductor interactions

Wang, Z., Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997, April). JOURNAL DE PHYSIQUE IV, Vol. 7, pp. 561–564.

Preferential Co-SI bonding at the Co/SiGe(100) interface

Applied Physics Letters, 71(21), 3060–3062.

Structure and stability of cobalt-silicon-germanium thin films

Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997, December). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 133, pp. 84–89.

Oriented diamond film structures on non-diamond substrates

Washington, DC: U.S. Patent and Trademark Office.