Works (10)
Updated: August 16th, 2024 13:37
1999 journal article
Germanium segregation in the Co/SiGe/Si(001) thin film system
JOURNAL OF MATERIALS RESEARCH, 14(11), 4372–4384.
Source: Web Of Science
Added: August 6, 2018
1999 journal article
Growth of epitaxial CoSi2 on SiGe(001)
JOURNAL OF APPLIED PHYSICS, 86(3), 1355–1362.
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1999 article
The effect of germanium on the Co-SiGe thin-film reaction
Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1999, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 6, pp. 521–523.
author keywords: cobalt silicide; silicon-germanium; thickness effects; interfacial bonding; molecular beam epitaxy
TL;DR:
Ge Co Germanium was found to have a strong influence on the path and products of the Co-SiGe reaction, and on the interfacial stability and crystallographic orientation of the silicide film, and the thickness effect was modelled in terms of the energy cost of Ge segregation.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Co-deposition of cobalt disilicide on silicon-germanium thin films
THIN SOLID FILMS, 320(2), 206–210.
author keywords: cobalt disilicide; silicon-germanium alloys; EXAFS
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Film thickness effects in the Co-Si1-xGex solid phase reaction
JOURNAL OF APPLIED PHYSICS, 84(8), 4285–4291.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1998 article
In situ studies of metal-semiconductor interactions with synchrotron radiation
Sayers, D. E., Goeller, P. T., Boyanov, B. I., & Nemanich, R. J. (1998, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 5, pp. 1050–1051.
author keywords: EXAFS; metal-semiconductor contacts; silicon-germanium alloys; molecular-beam epitaxy
TL;DR:
The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described and the signal-to-noise ratio obtained indicates that the apparatus is capable of supporting in situ EXAFS studies of approximately 0.1-monolayer-thick films.
(via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018
1997 article
An integrated growth and analysis system for in-situ XAS studies of metal-semiconductor interactions
Wang, Z., Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997, April). JOURNAL DE PHYSIQUE IV, Vol. 7, pp. 561–564.
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Preferential Co-SI bonding at the Co/SiGe(100) interface
Applied Physics Letters, 71(21), 3060–3062.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018
1997 article
Structure and stability of cobalt-silicon-germanium thin films
Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997, December). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 133, pp. 84–89.
author keywords: cobalt silicide; silicon-germanium alloys; metal-semiconductor contacts; molecular beam epitaxy
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1996 patent
Oriented diamond film structures on non-diamond substrates
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
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