Peter T. Goeller

Germanium segregation in the Co/SiGe/Si(001) thin film system

Journal of Materials Research, 14(11), 4372–4384.

Growth of epitaxial CoSi2 on SiGe(001)

Journal of Applied Physics, 86(3), 1355–1362.

The effect of germanium on the Co-SiGe thin-film reaction

Journal of Synchrotron Radiation, 6(1999 May 1), 521–523.

Co-deposition of cobalt disilicide on silicon-germanium thin films

Thin Solid Films, 320(2), 206–210.

Film thickness effects in the Co-Si1-xGex solid phase reaction

Journal of Applied Physics, 84(8), 4285–4291.

In situ studies of metal-semiconductor interactions with synchrotron radiation

Journal of Synchrotron Radiation, 5(3), 1050–1051.

An integrated growth and analysis system for in-situ XAS studies of metal-semiconductor interactions

Journal De Physique. IV, 7(C2 pt.1), 561–564.

Preferential Co-SI bonding at the Co/SiGe(100) interface

Applied Physics Letters, 71(21), 3060–3062.

Structure and stability of cobalt-silicon-germanium thin films

Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 133(1-4), 84–89.

Oriented diamond film structures on non-diamond substrates

Washington, DC: U.S. Patent and Trademark Office.