Peter T. Goeller

Works (10)

Updated: August 16th, 2024 13:37

1999 journal article

Germanium segregation in the Co/SiGe/Si(001) thin film system

JOURNAL OF MATERIALS RESEARCH, 14(11), 4372–4384.

By: P. Goeller n, B. Boyanov n, D. Sayers n, R. Nemanich n, A. Myers* & E. Steel*

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Growth of epitaxial CoSi2 on SiGe(001)

JOURNAL OF APPLIED PHYSICS, 86(3), 1355–1362.

By: B. Boyanov n, P. Goeller n, D. Sayers n & R. Nemanich n

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Source: Web Of Science
Added: August 6, 2018

1999 article

The effect of germanium on the Co-SiGe thin-film reaction

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1999, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 6, pp. 521–523.

By: B. Boyanov n, P. Goeller n, D. Sayers n & R. Nemanich n

author keywords: cobalt silicide; silicon-germanium; thickness effects; interfacial bonding; molecular beam epitaxy
TL;DR: Ge Co Germanium was found to have a strong influence on the path and products of the Co-SiGe reaction, and on the interfacial stability and crystallographic orientation of the silicide film, and the thickness effect was modelled in terms of the energy cost of Ge segregation. (via Semantic Scholar)
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Source: Web Of Science
Added: August 6, 2018

1998 journal article

Co-deposition of cobalt disilicide on silicon-germanium thin films

THIN SOLID FILMS, 320(2), 206–210.

By: P. Goeller n, B. Boyanov n, D. Sayers n & R. Nemanich n

author keywords: cobalt disilicide; silicon-germanium alloys; EXAFS
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Film thickness effects in the Co-Si1-xGex solid phase reaction

JOURNAL OF APPLIED PHYSICS, 84(8), 4285–4291.

By: B. Boyanov n, P. Goeller n, D. Sayers n & R. Nemanich n

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Source: Web Of Science
Added: August 6, 2018

1998 article

In situ studies of metal-semiconductor interactions with synchrotron radiation

Sayers, D. E., Goeller, P. T., Boyanov, B. I., & Nemanich, R. J. (1998, May 1). JOURNAL OF SYNCHROTRON RADIATION, Vol. 5, pp. 1050–1051.

By: D. Sayers n, P. Goeller n, B. Boyanov n & R. Nemanich n

author keywords: EXAFS; metal-semiconductor contacts; silicon-germanium alloys; molecular-beam epitaxy
TL;DR: The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described and the signal-to-noise ratio obtained indicates that the apparatus is capable of supporting in situ EXAFS studies of approximately 0.1-monolayer-thick films. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

1997 article

An integrated growth and analysis system for in-situ XAS studies of metal-semiconductor interactions

Wang, Z., Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997, April). JOURNAL DE PHYSIQUE IV, Vol. 7, pp. 561–564.

By: Z. Wang  n, P. Goeller n, B. Boyanov n, D. Sayers n & R. Nemanich n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Preferential Co-SI bonding at the Co/SiGe(100) interface

Applied Physics Letters, 71(21), 3060–3062.

By: B. Boyanov*, P. Goeller*, D. Sayers* & R. Nemanich

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Source: NC State University Libraries
Added: August 6, 2018

1997 article

Structure and stability of cobalt-silicon-germanium thin films

Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997, December). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 133, pp. 84–89.

By: P. Goeller n, B. Boyanov n, D. Sayers n & R. Nemanich n

author keywords: cobalt silicide; silicon-germanium alloys; metal-semiconductor contacts; molecular beam epitaxy
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14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1996 patent

Oriented diamond film structures on non-diamond substrates

Washington, DC: U.S. Patent and Trademark Office.

By: J. Glass, D. Simendinger & P. Goeller

Source: NC State University Libraries
Added: August 6, 2018

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