@misc{mueller_nagle_gyurcsik_kelley_2002, title={System and method for powering, controlling, and communicating with multiple inductively-powered devices}, volume={6,345,203}, number={2002 Feb. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Mueller, J. S. and Nagle, H. T. and Gyurcsik, R. S. and Kelley, A. W.}, year={2002} } @misc{mueller_nagle_gyurcsik_kelley_2001, title={System and method for powering, controlling, and communicating with multiple inductively-powered devices}, volume={6,263,247}, number={2001 July 17}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Mueller, J. S. and Nagle, H. T. and Gyurcsik, R. S. and Kelley, A. W.}, year={2001} } @misc{mueller_nagle_gyurcsik_kelley_2000, title={System and method for powering, controlling, and communicating with multiple inductively-powered devices}, volume={6,047,214}, number={2000 Apr. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Mueller, J. S. and Nagle, H. T. and Gyurcsik, R. S. and Kelley, A. W.}, year={2000} } @misc{cranford_gyurcsik_mcelwee_1999, title={Low voltage CMOS analog multiplier with extended input dynamic range}, volume={5,872,446}, number={1999 Feb. 16}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cranford, H. C. and Gyurcsik, R. S. and McElwee, J. F.}, year={1999} } @article{hughes-oliver_lu_davis_gyurcsik_1998, title={Achieving uniformity in a semiconductor fabrication process using spatial modeling}, volume={93}, ISSN={["0162-1459"]}, DOI={10.2307/2669600}, abstractNote={Abstract Material is deposited onto the wafer surface during several steps of wafer fabrication. This material must be deposited evenly across the entire wafer surface, close to the targeted thickness, and with little wafer-to-wafer variability. But unequal variances across the wafer and under different process conditions, as well as nonstationary correlation across a wafer, make these goals difficult to achieve, because traditional methods for optimizing deposition processes assume homogeneity and independence. We avoid these assumptions and determine the best settings of process variables using physically motivated statistical models for the mean response, unequal variances, and nonstationary spatial correlation structure. Data from a rapid thermal chemical vapor deposition process is used to illustrate the approach. A simulation exercise demonstrates the advantages of fitting flexible variance models and using appropriate performance measures.}, number={441}, journal={JOURNAL OF THE AMERICAN STATISTICAL ASSOCIATION}, author={Hughes-Oliver, JM and Lu, JC and Davis, JC and Gyurcsik, RS}, year={1998}, month={Mar}, pages={36–45} } @article{montalvo_gyurcsik_paulos_1997, title={An analog VLSI neural network with on-chip perturbation learning}, volume={32}, ISSN={["0018-9200"]}, DOI={10.1109/4.563675}, abstractNote={An analog very large scale integration (VLSI) neural network intended for cost-sensitive, battery-powered, high-volume applications is described. Weights are stored in the analog domain using a combination of dynamic and nonvolatile memory that allows both fast learning and reliable long-term storage. The synapse occupies 4.9 K /spl mu/m/sup 2/ in a 2-/spl mu/m technology. On-chip controlled perturbation-based gradient descent allows fast learning with very little external support. Other distinguishing features include a reconfigurable topology and a temperature-independent feedforward path. An eight-neuron, 64-synapse proof-of-concept chip reliably solves the exclusive-or problem in ten's of milliseconds and 4-b parity in hundred's of milliseconds.}, number={4}, journal={IEEE JOURNAL OF SOLID-STATE CIRCUITS}, author={Montalvo, AJ and Gyurcsik, RS and Paulos, JJ}, year={1997}, month={Apr}, pages={535–543} } @misc{sorrell_r. s._harris_1992, title={Method and apparatus for controlling rapid thermal processing systems}, volume={5,155,337}, number={1992 Oct. 13}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sorrell, F. Y. Gyurcsi and R. S. and Harris, H. A.}, year={1992} }