Christopher J. Harris

Gallium nitride based high-electron mobility devices

Washington, DC: U.S. Patent and Trademark Office.

Method of manufacturing gallium nitride based high-electron mobility devices

Washington, DC: U.S. Patent and Trademark Office.

Vertical junction field effect transistor having an epitaxial gate

Washington, DC: U.S. Patent and Trademark Office.

Method of manufacturing a vertical junction field effect transistor having an epitaxial gate

Washington, DC: U.S. Patent and Trademark Office.

Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance

Journal of Crystal Growth, 183(3), 323–337.

Molecular layer epitaxy by real-time optical process monitoring

Applied Surface Science, 112(1997 Mar.), 38–47.

Real-time monitoring of surface processes by p-polarized reflectance

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt.1), 807–815.