2008 patent
Gallium nitride based high-electron mobility devices
Washington, DC: U.S. Patent and Trademark Office.
2008 patent
Method of manufacturing gallium nitride based high-electron mobility devices
Washington, DC: U.S. Patent and Trademark Office.
2008 patent
Vertical junction field effect transistor having an epitaxial gate
Washington, DC: U.S. Patent and Trademark Office.
2007 patent
Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
Washington, DC: U.S. Patent and Trademark Office.
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Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance
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Molecular layer epitaxy by real-time optical process monitoring
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1997 article
Real-time monitoring of surface processes by p-polarized reflectance
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