Works (7)
2008 patent
Gallium nitride based high-electron mobility devices
Washington, DC: U.S. Patent and Trademark Office.
2008 patent
Method of manufacturing gallium nitride based high-electron mobility devices
Washington, DC: U.S. Patent and Trademark Office.
2008 patent
Vertical junction field effect transistor having an epitaxial gate
Washington, DC: U.S. Patent and Trademark Office.
2007 patent
Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
Washington, DC: U.S. Patent and Trademark Office.
1998 article
Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance
Bachmann, K. J., Sukidi, N., Höpfner, C., Harris, C., Dietz, N., Tran, H. T., … Banks, H. T. (1998, January 1). Journal of Crystal Growth, Vol. 183, pp. 323–337.
1997 article
Molecular layer epitaxy by real-time optical process monitoring
Bachmann, K. J., Höpfner, C., Sukidi, N., Miller, A. E., Harris, C., Aspnes, D. E., … Rossow, U. (1997, March 1). Applied Surface Science, Vol. 112, pp. 38–47.
1997 article
Real-time monitoring of surface processes by p-polarized reflectance
Dietz, N., Sukidi, N., Harris, C., & Bachmann, K. J. (1997, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.