Works (7)

2008 patent

Gallium nitride based high-electron mobility devices

Washington, DC: U.S. Patent and Trademark Office.

By: C. Harris, T. Gehrke, T. Weeks & C. Basceri

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Method of manufacturing gallium nitride based high-electron mobility devices

Washington, DC: U.S. Patent and Trademark Office.

By: C. Harris, T. Gehrke, T. Weeks & C. Basceri

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Vertical junction field effect transistor having an epitaxial gate

Washington, DC: U.S. Patent and Trademark Office.

By: C. Harris, A. Konstantinov & C. Basceri

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Method of manufacturing a vertical junction field effect transistor having an epitaxial gate

Washington, DC: U.S. Patent and Trademark Office.

By: C. Harris, A. Konstantinov & C. Basceri

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance

Journal of Crystal Growth, 183(3), 323–337.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Molecular layer epitaxy by real-time optical process monitoring

Applied Surface Science, 112(1997 Mar.), 38–47.

By: K. Bachmann, C. Hopfner, N. Sukidi, A. Miller, C. Harris, D. Aspnes, N. Dietz, H. Tran ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Real-time monitoring of surface processes by p-polarized reflectance

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt.1), 807–815.

By: N. Dietz, N. Sukidi, C. Harris & K. Bachmann

Source: NC State University Libraries
Added: August 6, 2018