2008 patent
Gallium nitride based high-electron mobility devices
Washington, DC: U.S. Patent and Trademark Office.
2008 patent
Method of manufacturing gallium nitride based high-electron mobility devices
Washington, DC: U.S. Patent and Trademark Office.
2008 patent
Vertical junction field effect transistor having an epitaxial gate
Washington, DC: U.S. Patent and Trademark Office.
2007 patent
Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
Washington, DC: U.S. Patent and Trademark Office.
1998 journal article
Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance
Journal of Crystal Growth, 183(3), 323–337.
1997 journal article
Molecular layer epitaxy by real-time optical process monitoring
Applied Surface Science, 112(1997 Mar.), 38–47.
1997 journal article
Real-time monitoring of surface processes by p-polarized reflectance
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt.1), 807–815.
