Works (7)
Updated: July 5th, 2023 16:04
2008 patent
Gallium nitride based high-electron mobility devices
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
2008 patent
Method of manufacturing gallium nitride based high-electron mobility devices
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
2008 patent
Vertical junction field effect transistor having an epitaxial gate
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
2007 patent
Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
1998 journal article
Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance
JOURNAL OF CRYSTAL GROWTH, 183(3), 323–337.
author keywords: p-polarized reflectance; surface kinetics; chemical beam epitaxy; real-time process monitoring
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Sources: Web Of Science, ORCID
Added: August 6, 2018
1997 journal article
Molecular layer epitaxy by real-time optical process monitoring
Applied Surface Science, 112(1997 Mar.), 38–47.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Sources: NC State University Libraries, ORCID
Added: August 6, 2018
1997 article
Real-time monitoring of surface processes by p-polarized reflectance
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807–815.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
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