Bruce J. Hinds

Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 2170–2177.

Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal

Applied Surface Science, 123(1998 Jan.), 490–495.

Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2171–2176.

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

Elimination of suboxide transition regions at Si-SiO(2) interfaces by rapid thermal annealing at 900 degrees C

Applied Surface Science, 117(1997 June), 202–206.

Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability

Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447), 191–196. Pittsburgh, PA: Materials Research Society.

Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1074–1079.