Bruce J. Hinds

Works (7)

Updated: February 10th, 2025 16:10

1999 article

Thermochemical stability of silicon–oxygen–carbon alloy thin films: A model system for chemical and structural relaxation at SiC–SiO2 interfaces

Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., … Maher, D. M. (1999, July 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: D. Wolfe n, B. Hinds n, F. Wang n, G. Lucovsky n, B. Ward n, M. Xu  n, R. Nemanich n, D. Maher n

topics (OpenAlex): Diamond and Carbon-based Materials Research; Semiconductor materials and devices; Advanced ceramic materials synthesis
Source: Web Of Science
Added: August 6, 2018

1998 article

Interfacial sub-oxide regions at SiSiO2 interfaces: minimization by post-oxidation rapid thermal anneal

Lucovsky, G., Koh, K., Chaflin, B., & Hinds, B. (1998, January 1). Applied Surface Science.

By: G. Lucovsky n, K. Koh n, B. Chaflin n & B. Hinds n

topics (OpenAlex): Semiconductor materials and devices; Silicon Nanostructures and Photoluminescence; Thin-Film Transistor Technologies
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2171–2176.

By: B. Hinds, F. Wang, D. Wolfe, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

By: B. Hinds, F. Wang, D. Wolfe, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1997 article

Elimination of sub-oxide transition regions at SiSiO2 interfaces by rapid thermal annealing at 900°C

Lucovsky, G., Banerjee, A., Niimi, H., Koh, K., Hinds, B., Meyer, C., … Kurz, H. (1997, June 1). Applied Surface Science.

By: G. Lucovsky n, A. Banerjee n, H. Niimi n, K. Koh n, B. Hinds n, C. Meyer *, G. Lüpke*, H. Kurz*

author keywords: Si-SiO2 interfaces; sub-oxide transition regions; plasma processing; rapid thermal annealing
topics (OpenAlex): Semiconductor materials and devices; Silicon Nanostructures and Photoluminescence; Electronic and Structural Properties of Oxides
Source: Web Of Science
Added: August 6, 2018

1997 conference paper

Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability

Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447), 191–196. Pittsburgh, PA: Materials Research Society.

By: B. Hinds, D. Aspenes  & G. Lucovsky

Ed(s):

Source: NC State University Libraries
Added: August 6, 2018

1997 article

Minimization of sub-oxide transition regions at SiSiO2 interfaces by 900°C rapid thermal annealing

Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997, June 1). Microelectronic Engineering.

By: G. Lucovsky*, A. Banerjee*, B. Hinds*, B. Claflin*, K. Koh* & H. Yang*

topics (OpenAlex): Semiconductor materials and devices; Electron and X-Ray Spectroscopy Techniques; Electronic and Structural Properties of Oxides
Source: Web Of Science
Added: August 6, 2018

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