Works (7)

1999 journal article

Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 2170–2177.

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal

Applied Surface Science, 123(1998 Jan.), 490–495.

By: G. Lucovsky, K. Koh, B. Chaflin & B. Hinds

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2171–2176.

By: B. Hinds, F. Wang, D. Wolfe, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

By: B. Hinds, F. Wang, D. Wolfe, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Elimination of suboxide transition regions at Si-SiO(2) interfaces by rapid thermal annealing at 900 degrees C

Applied Surface Science, 117(1997 June), 202–206.

By: G. Lucovsky, A. Banerjee, H. Niimi, K. Koh, B. Hinds, C. Meyer, G. Lupke, H. Kurz

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability

Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447), 191–196. Pittsburgh, PA: Materials Research Society.

By: B. Hinds, D. Aspenes & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1074–1079.

Source: NC State University Libraries
Added: August 6, 2018