Works (10)
2001 journal article
Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV
APPLIED PHYSICS LETTERS, 78(18), 2715–2717.
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2000 journal article
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157.
2000 article
Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 1033–1036.
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2000 journal article
Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry
SURFACE SCIENCE, 464(1), L703–L707.
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1998 article
Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy
Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). VACUUM, Vol. 49, pp. 189–191.
1998 journal article
Materials properties and characterization of SiC
SIC MATERIALS AND DEVICES, 52, 1–20.
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1998 article
Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent films
Jarrendahl, K., & Arwin, H. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 114–118.
1997 article
Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization
Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997, August). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 1282–1288.
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1997 journal article
Homoepitaxial SiC growth by molecular beam epitaxy
Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.
1997 journal article
Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition
JOURNAL OF MATERIALS RESEARCH, 12(7), 1806–1815.