2001 journal article
Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV
APPLIED PHYSICS LETTERS, 78(18), 2715–2717.
2000 journal article
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157.
2000 article
Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 1033–1036.
2000 journal article
Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry
SURFACE SCIENCE, 464(1), L703–L707.
1998 article
Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy
Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). VACUUM, Vol. 49, pp. 189–191.
1998 journal article
Materials properties and characterization of SiC
SIC MATERIALS AND DEVICES, 52, 1–20.
1998 article
Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent films
Jarrendahl, K., & Arwin, H. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 114–118.
1997 article
Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization
Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997, August). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 1282–1288.
1997 journal article
Homoepitaxial SiC growth by molecular beam epitaxy
Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.
1997 journal article
Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition
JOURNAL OF MATERIALS RESEARCH, 12(7), 1806–1815.
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