Works (10)
2001 article
Ordinary and extraordinary dielectric functions of 4H– and 6H–SiC from 3.5 to 9.0 eV
Lindquist, O. P. A., Järrendahl, K., Peters, S., Zettler, J. T., Cobet, C., Esser, N., … Edwards, N. V. (2001, April 30). Applied Physics Letters, Vol. 78, pp. 2715–2717.
2000 article
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., … Collaboration, I. S. O. L. D. E. (2000, March 1). Journal of Applied Physics.
2000 article
Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact Formation
Edwards, N. V., Madsen, L. D., Robbie, K., Powell, G. D., Järrendahl, K., Cobet, C., … Aspnes, D. E. (2000, May 10). Materials Science Forum, Vol. 338, pp. 1033–1036.
2000 article
Real-time assessment of selected surface preparation regimens for 4H–SiC surfaces using spectroscopic ellipsometry
Edwards, N. V., Järrendahl, K., Aspnes, D. E., Robbie, K., Powell, G. D., Cobet, C., … Madsen, L. D. (2000, September 1). Surface Science, Vol. 464, pp. L703–707.
1998 article
Chapter 1 Materials Properties and Characterization of SiC
Järrendahl, K., & Davis, R. F. (1998, January 1). Semiconductors and Semimetals.
1998 article
Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy
Järrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March 1). Vacuum.
1998 article
Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent films
Järrendahl, K., & Arwin, H. (1998, February 1). Thin Solid Films.
1997 article
Growth and doping via gas-source molecular beam epitaxy of SiC and heterostructures and their microstructural and electrical characterization
Kern, R. S., Järrendahl, K., Tanaka, S., & Davis, R. F. (1997, August 1). Diamond and Related Materials.
1997 journal article
Homoepitaxial SiC growth by molecular beam epitaxy
Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.
1997 article
Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition
Järrendahl, K., Ivanov, I., Sundgren, J.-E., Radnóczi, G., Czigany, Z., & Greene, J. E. (1997, July 1). Journal of Materials Research/Pratt's Guide to Venture Capital Sources.