2001 journal article

Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV

APPLIED PHYSICS LETTERS, 78(18), 2715–2717.

By: O. Lindquist*, K. Jarrendahl*, S. Peters*, J. Zettler*, C. Cobet*, N. Esser*, D. Aspnes n, A. Henry*, N. Edwards*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2000 journal article

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157.

By: C. Ronning*, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, H. Hofsass, T. Gehrke*, K. Jarrendahl*, R. Davis*

Source: Web Of Science
Added: August 6, 2018

2000 article

Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 1033–1036.

By: N. Edwards*, L. Madsen*, K. Robbie*, G. Powell n, K. Jarrendahl*, C. Cobet*, N. Esser*, W. Richter*, D. Aspnes n

author keywords: cleaning; contact; spectroscopic ellipsometry; surface preparation; synchrotron
Sources: Web Of Science, ORCID
Added: August 6, 2018

2000 journal article

Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry

SURFACE SCIENCE, 464(1), L703–L707.

By: N. Edwards*, K. Jarrendahl*, D. Aspnes n, K. Robbie*, G. Powell n, C. Cobet*, N. Esser*, W. Richter*, L. Madsen*

author keywords: contact; ellipsometry; etching; semiconducting surfaces; silicon carbide; vicinal single crystal surfaces
UN Sustainable Development Goal Categories
Sources: Web Of Science, ORCID
Added: August 6, 2018

1998 article

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). VACUUM, Vol. 49, pp. 189–191.

By: K. Jarrendahl n, S. Smith n, T. Zheleva n, R. Kern n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Materials properties and characterization of SiC

SIC MATERIALS AND DEVICES, 52, 1–20.

By: K. Jarrendahl* & R. Davis n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 article

Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent films

Jarrendahl, K., & Arwin, H. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 114–118.

By: K. Jarrendahl n & H. Arwin*

author keywords: spectroscopic ellipsometry; multiple sample analysis; Ta2O5; ScN; CeO2
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997, August). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 1282–1288.

By: R. Kern n, K. Jarrendahl n, S. Tanaka n & R. Davis n

author keywords: silicon carbide; aluminum nitride; molecular beam epitaxy; kinetics
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Homoepitaxial SiC growth by molecular beam epitaxy

Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

By: R. Kern, K. Jarrendahl, S. Tanaka & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition

JOURNAL OF MATERIALS RESEARCH, 12(7), 1806–1815.

By: K. Jarrendahl*, I. Ivanov*, J. Sundgren*, G. Radnoczi*, Z. Czigany* & J. Greene*

Source: Web Of Science
Added: August 6, 2018

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