Kenneth Jarrendahl

Lindquist, O. P. A., Jarrendahl, K., Peters, S., Zettler, J. T., Cobet, C., Esser, N., … Edwards, N. V. (2001). Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV. Applied Physics Letters, 78(18), 2715–2717. https://doi.org/10.1063/1.1369617

Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., … Davis, R. F. (2000). Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery. Journal of Applied Physics, 87(5), 2149–2157. https://doi.org/10.1063/1.372154

Edwards, N. V., Madsen, L. D., Robbie, K., Powell, G. D., Jarrendahl, K., Cobet, C., … Aspnes, D. E. (2000). Real-time assessment of over layer removal on 4H-SiC surfaces: Techniques and relevance to contact formation. Materials Science Forum, 338(3), 1033–1036. https://doi.org/10.4028/www.scientific.net/msf.338-342.1033

Edwards, N. V., Jarrendahl, K., Aspnes, D. E., Robbie, K., Powell, G. D., Cobet, C., … Madsen, L. D. (2000). Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry. Surface Science, 464(1), L703–707. https://doi.org/10.1016/S0039-6028(00)00689-0

Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998). Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy. Vacuum, 49(3), 189–191. https://doi.org/10.1016/S0042-207X(97)00177-2

Jarrendahl, K., & Davis, R. F. (1998). Materials properties and characterization of SiC. Semiconductors and Semimetals, 52(1998), 1–20. https://doi.org/10.1016/S0080-8784(08)62843-4

Jarrendahl, K., & Arwin, H. (1998). Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent films. Thin Solid Films, 313(1998 Feb.), 114–118. https://doi.org/10.1016/S0040-6090(97)00781-5

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997). Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization. Diamond and Related Materials, 6(10), 1282–1288. https://doi.org/10.1016/S0925-9635(97)00066-6

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997). Homoepitaxial SiC growth by molecular beam epitaxy. Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

Jarrendahl, K., Ivanov, I., Sundgren, J. E., Radnoczi, G., Czigany, Z. S., & Greene, J. E. (1997). Microstructure evolution in amorphous GE/SI multilayers grown by magnetron sputter deposition. Journal of Materials Research, 12(7), 1806–1815. https://doi.org/10.1557/JMR.1997.0249