Kenneth Jarrendahl

Lindquist, O. P. A., Jarrendahl, K., Peters, S., Zettler, J. T., Cobet, C., Esser, N., … Edwards, N. V. (2001). Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV. APPLIED PHYSICS LETTERS, 78(18), 2715–2717. https://doi.org/10.1063/1.1369617

Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., … Davis, R. F. (2000). Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery. JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157. https://doi.org/10.1063/1.372154

Edwards, N. V., Madsen, L. D., Robbie, K., Powell, G. D., Jarrendahl, K., Cobet, C., … Aspnes, D. E. (2000). Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 1033–1036. https://doi.org/10.4028/www.scientific.net/msf.338-342.1033

Edwards, N. V., Jarrendahl, K., Aspnes, D. E., Robbie, K., Powell, G. D., Cobet, C., … Madsen, L. D. (2000). Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry. SURFACE SCIENCE, 464(1), L703–L707. https://doi.org/10.1016/S0039-6028(00)00689-0

Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy. VACUUM, Vol. 49, pp. 189–191. https://doi.org/10.1016/S0042-207X(97)00177-2

Jarrendahl, K., & Davis, R. F. (1998). Materials properties and characterization of SiC. SIC MATERIALS AND DEVICES, 52, 1–20. https://doi.org/10.1016/S0080-8784(08)62843-4

Jarrendahl, K., & Arwin, H. (1998, February). Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent films. THIN SOLID FILMS, Vol. 313, pp. 114–118. https://doi.org/10.1016/S0040-6090(97)00781-5

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997, August). Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 1282–1288. https://doi.org/10.1016/S0925-9635(97)00066-6

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997). Homoepitaxial SiC growth by molecular beam epitaxy. Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

Jarrendahl, K., Ivanov, I., Sundgren, J. E., Radnoczi, G., Czigany, Z., & Greene, J. E. (1997). Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition. JOURNAL OF MATERIALS RESEARCH, 12(7), 1806–1815. https://doi.org/10.1557/JMR.1997.0249