@article{lucovsky_yang_jing_whitten_1997, title={Hydrogen atom participation in metastable defect formation at Si-SiO2 interfaces}, volume={117}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(97)80077-3}, abstractNote={This paper discusses mechanisms for defect metastability with H atom participation at SiSiO2 interfaces as in field effect transistors. Reaction pathways are associated with differences in defect bonding properties between positively charged (i) Si atoms and (ii) O and N atoms. Defect reaction equations, supported by quantum chemistry calculations, are presented. The metastable defects emphasized here are created by hole trapping followed by H atom attachment.}, number={1997 June}, journal={APPLIED SURFACE SCIENCE}, author={Lucovsky, G and Yang, H and Jing, Z and Whitten, JL}, year={1997}, month={Jun}, pages={192–197} }